5秒后页面跳转
捷配首页

Datasheet > 1N5355BEB
1N5355BEB PDF预览

1N5355BEB

更新时间： 2024-02-08 07:30:16
品牌 Logo 应用领域
美微科 - MCC 测试二极管
页数 文件大小 规格书
6页 653K
描述
Zener Diode, 18V V(Z), 5%, 5W, Silicon, Unidirectional, DO-201AE, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

1N5355BEB 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-201AE包装说明：PLASTIC PACKAGE-2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.12外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：ZENER DIODEJEDEC-95代码：DO-201AE
JESD-30 代码：O-PALF-W2JESD-609代码：e0
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：UNIDIRECTIONAL最大功率耗散：5 W
认证状态：Not Qualified标称参考电压：18 V
表面贴装：NO技术：ZENER
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
最大电压容差：5%工作测试电流：65 mA
Base Number Matches：1

1N5355BEB 数据手册

 浏览型号1N5355BEB的Datasheet PDF文件第1页浏览型号1N5355BEB的Datasheet PDF文件第2页浏览型号1N5355BEB的Datasheet PDF文件第4页浏览型号1N5355BEB的Datasheet PDF文件第5页浏览型号1N5355BEB的Datasheet PDF文件第6页 
M C C  
TM  
Micro Commercial Components  
1N5348BE THRU 1N5388BE  
ELECTRICAL CHARACTERISTICS  
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave  
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge  
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on  
logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting  
℃
contact located as specified in Note 3. (TA=25 ).  
4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made  
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the  
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40 10 ms.  
(TA=25 ). Mounting contact located as specified in Note2.  
5. MAXIMUM REGULATOR CURRENT (IZM) - The maximum current shown is based on the maximum voltage of a  
5% type unit. Therefore, it applies only to the B-suffix device. The actual IZM for any device may not exceed the  
value of 5 watts divided by the actual Vz of the device. TL=75 at maximum from the device body.  
APPLICATION NOTE:  
of PD and the extremes of TJ(TJ) may be estimated.  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
Changes in voltage, Vz, can then be found from:  
, the zener voltage temperature coefficient, is fount  
from Figures 2.  
Lead Temperature, TL, should be determined from:  
Under high power-pulse operation, the zener voltage will  
vary with time and may also be affected significantly be  
the zener resistance. For best regulation, keep current  
excursions as low as possible.  
TL =th LAPD + TA  
th LA is the lead-to-ambient thermal resistance ( /W)  
and PD is the power dissipation.  
Junction Temperature, TJ , may be found from:  
TJ = TL + TJL  
Data of Figure 3 should not be used to compute surge  
capability. Surge limitations are given in Figure 5. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting  
in device degradation should the limits of Figure. 5 be  
exceeded.  
TJL is the increase in junction temperature above the  
lead temperature and may be found from Figure 3 for a  
train of power pulses or from Figure 4 for dc power.  
TJL  
= JLPD  
For worst-case design, using expected limits of Iz, limits  
www.mccsemi.com  
Revision: 6  
2006/05/28  
3 of 6  
123456

中文翻译

下载PDF

与1N5355BEB相关器件

型号 品牌 描述 获取价格 数据表
1N5355BE-BP MCC 暂无描述

获取价格
1N5355BE-T MCC Zener Diode,

获取价格
1N5355BE-TP MCC Zener Diode,

获取价格
1N5355BG ONSEMI 5 Watt Surmetic TM 40 Zener Voltage Regulators

获取价格
1N5355BL SUNMATE Protection Devices Zener diode

获取价格
1N5355BLEADFREE CENTRAL Zener Diode, 18V V(Z), 5%, 5W, Silicon, Unidirectional

获取价格

与1N5355BEB相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证