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1N5251B PDF预览

1N5251B

更新时间: 2024-02-25 10:13:51
品牌 Logo 应用领域
美台 - DIODES 稳压二极管测试
页数 文件大小 规格书
2页 36K
描述
500mW EPITAXIAL ZENER DIODE

1N5251B 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-213AA包装说明:HERMETIC SEALED, GLASS, MLL34, MELF-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.19Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:22 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:20%工作测试电流:5.6 mA
Base Number Matches:1

1N5251B 数据手册

 浏览型号1N5251B的Datasheet PDF文件第2页 
1N5221B - 1N5267B  
500mW EPITAXIAL ZENER DIODE  
Features  
·
·
·
·
·
·
500mW Power Dissipation  
High Stability  
Low Noise  
Surface Mount Equivalents Available  
Hermetic Package  
VZ - Tolerance ±5%  
A
B
A
C
D
Mechanical Data  
DO-35  
·
Case: DO-35, Glass  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: Cathode Band  
Marking: Type Number  
Weight: 0.13 grams (approx.)  
Dim  
A
Min  
25.40  
¾
Max  
¾
·
B
4.00  
0.60  
2.00  
·
·
·
C
¾
D
¾
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Symbol  
Pd  
Value  
500  
Unit  
mW  
°C/W  
V
RqJA  
300  
Forward Voltage  
@ IF = 200mA  
VF  
1.1  
Tj, TSTG  
°C  
Operating and Storage Temperature Range  
-65 to +200  
Notes:  
1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.  
DS18006 Rev. 14 - 2  
1 of 2  
1N5221B - 1N5267B  

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