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1N5251B PDF预览

1N5251B

更新时间: 2024-02-07 07:45:12
品牌 Logo 应用领域
星合电子 - GXELECTRONICS 二极管测试
页数 文件大小 规格书
2页 203K
描述
Silicon Z–Diodes

1N5251B 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-213AA包装说明:HERMETIC SEALED, GLASS, MLL34, MELF-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.19Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.5 W认证状态:Not Qualified
标称参考电压:22 V子类别:Voltage Reference Diodes
表面贴装:YES技术:ZENER
端子面层:TIN LEAD端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:20%工作测试电流:5.6 mA
Base Number Matches:1

1N5251B 数据手册

 浏览型号1N5251B的Datasheet PDF文件第2页 
1N5221B...1N5267B  
星合 子  
Vishay Telefunken  
XINGHE ELECTRONICS  
Silicon Z–Diodes  
Features  
Very sharp reverse characteristic  
Very high stability  
Low reverse current level  
V –tolerance ± 5%  
Z
Applications  
94 9367  
Voltage stabilization  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Power dissipation  
Z–current  
Junction temperature  
Storage temperature range  
Test Conditions  
75 C  
Type  
Symbol  
Value  
500  
Unit  
mW  
mA  
C
P
V
T
L
I
Z
P /V  
V
Z
T
200  
–65...+200  
j
T
stg  
C
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
l=9.5mm (3/8”), T =constant  
Symbol  
R
thJA  
Value  
300  
Unit  
K/W  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Forward voltage  
Test Conditions  
I =200mA  
Type  
Symbol Min  
Typ Max Unit  
V
F
1.1  
V
F
Dimensions in mm  
Cathode Identification  
0.55 max.  
technical drawings  
according to DIN  
specifications  
1.7 max.  
94 9366  
Standard Glass Case  
54 A 2 DIN 41880  
JEDEC DO 35  
26 min.  
3.9 max.  
26 min.  
Weight max. 0.3g  
1
GAOMI XINGHE ELECTRONICSCO.,LTD.  
WWW.SDDZG.COM TEL:0536-2210359  

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