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1N5226B PDF预览

1N5226B

更新时间: 2024-11-25 22:37:59
品牌 Logo 应用领域
上华 - COMCHIP 稳压二极管测试
页数 文件大小 规格书
2页 35K
描述
500mw Epitaxial Zener Diode

1N5226B 数据手册

 浏览型号1N5226B的Datasheet PDF文件第2页 
550000mmww EEppiittaaxxiiaall ZZeenneerr DDiiooddee  
CCOOMMCCHHIIPP  
www.comchiptech.com  
1N5221B thru 1N5267B  
Nominal Zener Voltage: 2.4 to 75V  
Power Dissipation: 0.5W  
DO-35 Glass  
Features  
- 500mW Power Dissipation  
- 2.4V - 75V Nominal Zener Voltage  
- Low Noise  
1.0 (25.4)  
Min.  
0.079 (2.0)  
Max.  
- Surface Mount Equivalents Available  
- Hermetic Package  
0.157 (4.0)  
Max.  
- VZ - Tolerance 5%  
Mechanical Data  
- Case: DO-35, Glass  
- Terminals: Solderable per MIL-STD-202,  
Method 208  
1.0 (25.4)  
Min.  
0.024 (0.60)  
Max.  
- Polarity: Cathode Band  
- Approx. Weight: 0.13 grams  
Dimensions in inches and (millimeters)  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Characteristic  
Power Dissipation (Note 1)  
Thermal Resistance, Junction to Ambient Air (Note 1)  
Symbol  
Pd  
Value  
500  
Unit  
mW  
°C/W  
V
RqJA  
300  
Forward Voltage  
@ IF = 200mA  
VF  
1.1  
Tj, TSTG  
°C  
Operating and Storage Temperature Range  
-65 to +200  
Notes:  
1. Valid provided that leads are kept at TL £75°C with lead length = 9.5mm (3/8”) from case; derate above 75°C.  
Page 1  
MDS0312004A  

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