1N5061GPE

更新时间： 2024-02-02 18:31:28

品牌	Logo	应用领域
威世 - VISHAY		二极管测试
页数	文件大小	规格书
2页	55K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-204AP

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5061GPE 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	JESD-609代码：	e0
最大非重复峰值正向电流：	50 A	元件数量：	1
最高工作温度：	150 °C	最大输出电流：	2 A
最大重复峰值反向电压：	600 V	子类别：	Rectifier Diodes
表面贴装：	NO	端子面层：	Tin/Lead (Sn80Pb20)

1N5061GPE 数据手册

1N5059 THRU 1N5062

GLASS PASSIVATED JUNCTION RECTIFIER

Reverse Voltage - 200 to 800 Volts

Forward Current - 1. 0 Ampere

FEATURES

♦ High temperature metallurgically bonded

construction

DO-204AP

♦ 1.0 Ampere operation at T =75°C

0.034 (0.86)

0.028 (0.71)

with no thermal runaway

1.0 (25.4)

DIA.

MIN.

♦ Typical I less than 0.1µA

♦ Hermetically sealed package

♦ Glass passivated cavity-free junction

♦ Capable of meeting environmental standards of

MIL-S-19500

0.240 (6.1)

MAX.

♦ High temperature soldering guaranteed:

350°C/10 seconds 0.375” (9.5mm) lead length,

5 lbs. (2.3kg) tension

0.150 (3.8)

0.100 (2.5)

DIA.

1.0 (25.4)

MIN.

MECHANICAL DATA

Case:JEDEC DO-204AP solid glass body

Terminals: Solder plated axial leads, solderable per

MIL-STD-750, Method 2026

Dimensions in inches and (millimeters)

Polarity: Color band denotes cathode end

Weight: 0.02 ounce, 0.56 gram

*Brazed-lead assembly is covered by Patent No. 3,930,306

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

SYMBOLS

V_RRM

V_RMS

V_DC

1N5059

200

1N5060

400

1N5061

600

1N5062

800

UNITS

Volts

* Maximum repetitive peak reverse voltage

Maximum RMS voltage

140

280

420

560

* Maximum DC blocking voltage

200

400

600

800

* Maximum average forward rectified current

0.375” (9.5mm) lead length at T_A=75°C

I_(AV)

1.0

Amp

* Peak forward surge current

8.3ms single half sine-wave superimposed

on rated load (JEDEC Method)

I_FSM

V_F

50.0

Amps

Volts

µA

* Maximum instantaneous forward voltage at 1.0A

* Maximum full Load reverse current, full cycle

1.2

5.0

average 0.375” (9.5mm)

lead length at

T_A=25°C

T_A=75°C

I_R(AV)

150

300

100

200

* Maximum DC reverse current

at rated DC blocking voltage

T_A=25°C

T_A=175°C

5.0

I_R

µA

Typical reverse recovery time _{(NOTE 1)}

Typical junction capacitance _{(NOTE 2)}

t_rr

C_J

1.5

15.0

55.0

µs

Typical thermal resistance _{(NOTE 3)}

R_ΘJA

T_J, T_STG

°C/W

°C

* Operating junction and storage temperature range

-65 to +175

NOTES:

(1) Reverse recovery test conditions: I_F=0.5A, I_R=1.0A, lrr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts

(3) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length P.C.B. mounted

*JEDEC registered values

4/98

下载PDF

与1N5061GPE相关器件

型号	品牌	描述	获取价格	数据表
1N5061GP-E3	VISHAY	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signa	获取价格
1N5061GP-E3/4E	VISHAY	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5061GP-E3/4F	VISHAY	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5061GP-E3/4G	VISHAY	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5061GP-E3/4H	VISHAY	DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode	获取价格
1N5061GP-E3/51	VISHAY	Diode Switching 600V 1A 2-Pin DO-15 Bulk	获取价格

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5061GPE

1N5061GPE 技术参数

1N5061GPE 数据手册

与1N5061GPE相关器件

与1N5061GPE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N5061GPE

1N5061GPE 技术参数

1N5061GPE 数据手册

与1N5061GPE相关器件

与1N5061GPE相关文章

您还可以找

您在本页遇到什么问题？