Datasheet > 1N4936/51

1N4936/51

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	325K
描述
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4936/51 数据手册

1N4933 thru 1N4937

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Test condition

Symbol 1N4933 1N4934 1N4935 1N4936 1N4937

Unit

Maximum instantaneous

forward voltage

at 1.0 A

V_F

1.2

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25 °C

T_A= 100 °C

I_R

5.0

100

µA

Maximum reverse recovery

time

I_F= 1.0 A, V_R= 30 V,

t_rr

200

di/dt = 50 A/µs, I_rr= 10 % I_RM

Typical junction capacitance

at 4.0 V, 1 MHz

C_J

Thermal Characteristics

(T_A= 25 °C unless otherwise noted)

Parameter

Symbol 1N4933 1N4934 1N4935 1N4936 1N4937

Unit

Typical thermal resistance ⁽¹⁾

R_θJA

R_θJL

°C/W

Note:

(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise noted)

1.0

0.8

0.6

0.4

0.2

TA = 75 °C

8.3 ms Single Half Sine-Wave

0.375" (9.5mm)

Lead Length

1.0 Cycle

I_(pk)

= π

I_(AV)

Capacitive Load

I_(pk)

5.0

I_(AV)

100

125

150

175

Number of Cycles at 60 Hz

100

Ambient Temperature (°C)

Figure 1. Forward Current Derating Curves

Figure 2. Maximum Non-repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88508

10-Oct-05

123 4

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