Datasheet > 1N4737ARL

1N4737ARL

更新时间： 2024-01-05 04:47:38

品牌	Logo	应用领域
安森美 - ONSEMI		测试二极管
页数	文件大小	规格书
8页	61K
描述
7.5V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, HERMETIC SEALED, GLASS, CASE 59-10, 2 PIN

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技术参数
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1N4737ARL 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
零件包装代码：	DO-41	包装说明：	O-LALF-W2
针数：	2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
Factory Lead Time：	1 week	风险等级：	5
其他特性：	METALLURGICALLY BONDED	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	最大动态阻抗：	4 Ω
JEDEC-95代码：	DO-41	JESD-30 代码：	O-LALF-W2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	200 °C
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	极性：	UNIDIRECTIONAL
最大功率耗散：	1 W	认证状态：	Not Qualified
标称参考电压：	7.5 V	子类别：	Voltage Reference Diodes
表面贴装：	NO	技术：	ZENER
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	WIRE
端子位置：	AXIAL	最大电压容差：	5%
工作测试电流：	34 mA	Base Number Matches：	1

1N4737ARL 数据手册

1N4728A Series

APPLICATION NOTE

Since the actual voltage available from a given zener

∆T is the increase in junction temperature above the lead

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

temperature and may be found as follows:

∆T_JL= θ_JLP_D.

may be determined from Figure 3 for dc power

Lead Temperature, T , should be determined from:

conditions. For worst-case design, using expected limits of

I , limits of P and the extremes of T (∆T ) may be

T_L= θ_LAP_D+ T_A.

estimated. Changes in voltage, V , can then be found

from:

is the lead-to-ambient thermal resistance (°C/W) and P

is the power dissipation. The value for θ will vary and

∆V = θ_VZ∆T_J.

depends on the device mounting method. θ is generally 30

to 40°C/W for the various clips and tie points in common use

and for printed circuit board wiring.

, the zener voltage temperature coefficient, is found

from Figure 2.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Surge limitations are given in Figure 5. They are lower

than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots, resulting in device

degradation should the limits of Figure 5 be exceeded.

Using the measured value of T , the junction temperature

may be determined by:

T_J= T_L+ ∆T_JL

http://onsemi.com

1...3 4 567 8

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1N4737ARL 替代型号

型号	品牌	替代类型	描述	数据表
1N4737ARL	ONSEMI	当前型号	7.5V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, HERMETIC SEALED, GLASS,
BZX85C7V5	ONSEMI	功能相似	齐纳二极管
1N4737A	ONSEMI	功能相似	Zener 1W 5%

与1N4737ARL相关器件

型号	品牌	描述	获取价格	数据表
1N4737ARL2	MOTOROLA	7.5V, 1W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, GLASS, CASE 59-03, 2 PIN	获取价格
1N4737AT	PANJIT	暂无描述	获取价格
1N4737A-T	PANJIT	1.0W ZENER DIODE	获取价格
1N4737A-T	RECTRON	Zener Diode, 7.5V V(Z), 1W, Silicon, Unidirectional, DO-41, HALOGEN FREE AND ROHS COMPLIAN	获取价格
1N4737AT/R	PHILIPS	Zener Diode, 7.5V V(Z), 5%, 1W,	获取价格
1N4737A-T/R	FRONTIER	Zener Diode, 7.5V V(Z), 5%, 1W, Silicon, Unidirectional	获取价格

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