5秒后页面跳转
1N4678TAP PDF预览

1N4678TAP

更新时间: 2024-02-26 19:05:17
品牌 Logo 应用领域
威世 - VISHAY 二极管测试
页数 文件大小 规格书
6页 70K
描述
Zener Diode, 1.8V V(Z), 5%, 0.5W,

1N4678TAP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-213AA
包装说明:O-LELF-R2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.43
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-213AAJESD-30 代码:O-LELF-R2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:1.8 V
表面贴装:YES技术:ZENER
端子面层:Tin/Lead (Sn/Pb)端子形式:WRAP AROUND
端子位置:END处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:5%工作测试电流:0.05 mA
Base Number Matches:1

1N4678TAP 数据手册

 浏览型号1N4678TAP的Datasheet PDF文件第1页浏览型号1N4678TAP的Datasheet PDF文件第2页浏览型号1N4678TAP的Datasheet PDF文件第4页浏览型号1N4678TAP的Datasheet PDF文件第5页浏览型号1N4678TAP的Datasheet PDF文件第6页 
1N4678...1N4717  
Vishay Telefunken  
1.) Toleranzing and voltage designation (V ).  
Z
The type numbers shown have a standard tolerance of ± 5% on the nominal zener voltage.  
2.) Maximum zener current ratings (I ).  
ZM  
Maximum zener current ratings are based on maximum zener voltage of the individual units.  
3.) Reverse leakage current (I ).  
R
Reverse leakage currents are guaranteed and measured at V as shown on the table.  
R
4.) Maximum voltage change ( V ).  
Z
Voltage change is equal to the difference between V at 100 A and V at 10 A.  
Z
Z
Characteristics (Tj = 25 C unless otherwise specified)  
600  
500  
400  
300  
200  
100  
0
1.3  
1.2  
1.1  
V
=V /V (25°C)  
Zt Z  
Ztn  
–4  
TK =10 10 /K  
VZ  
–4  
8
6
10 /K  
–4  
10 /K  
–4  
4
2
10 /K  
–4  
10 /K  
0
1.0  
0.9  
0.8  
–4  
–2 10 /K  
–4  
–4 10 /K  
200  
240  
0
40  
80  
120  
160  
–60  
0
60  
120  
180  
95 9602  
T
amb  
– Ambient Temperature ( °C )  
95 9599  
T – Junction Temperature ( °C )  
j
Figure 1. Total Power Dissipation vs.  
Ambient Temperature  
Figure 3. Typical Change of Working Voltage vs.  
Junction Temperature  
1000  
100  
10  
15  
10  
5
T =25°C  
j
I =5mA  
Z
I =5mA  
Z
0
1
–5  
25  
50  
0
5
10  
15  
20  
0
10  
20  
30  
40  
95 9598  
V – Z-Voltage ( V )  
Z
95 9600  
V – Z-Voltage ( V )  
Z
Figure 2. Typical Change of Working Voltage  
under Operating Conditions at T =25 C  
Figure 4. Temperature Coefficient of Vz vs.  
Z–Voltage  
amb  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 85586  
Rev. 2, 01-Apr-99  
3 (6)  

与1N4678TAP相关器件

型号 品牌 描述 获取价格 数据表
1N4678TR CENTRAL Zener Diode, 1.8V V(Z), 0.25W, Silicon, Unidirectional, DO-35,

获取价格

1N4678TR MICROSEMI Zener Diode, 1.8V V(Z), 5%, 0.417W, Silicon, Unidirectional, DO-204AA, HERMETIC SEALED, GL

获取价格

1N4678TRLEADFREE CENTRAL Zener Diode, 1.8V V(Z), 0.25W, Silicon, Unidirectional, DO-35,

获取价格

1N4678TR-RMCU CENTRAL Zener Diode, 1.8V V(Z), 0.25W, Silicon, Unidirectional, DO-35,

获取价格

1N4678UR-1 MICROSEMI Zener Diode, 1.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, MELF-2

获取价格

1N4678UR-1/TR MICROSEMI Zener Diode, 1.8V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-213AA, HERMETIC SEALED, GLAS

获取价格