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1N4678D-1TR PDF预览

1N4678D-1TR

更新时间: 2024-02-22 11:42:13
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
3页 325K
描述
Zener Diode, 1.8V V(Z), 1%, 0.5W, Silicon, Unidirectional, DO-204AH, HERMETIC SEALED, GLASS, DO-35, 2 PIN

1N4678D-1TR 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:DO-35包装说明:O-LALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.65Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-204AHJESD-30 代码:O-LALF-W2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:1.8 V
表面贴装:NO技术:ZENER
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
最大电压容差:1%工作测试电流:0.05 mA
Base Number Matches:1

1N4678D-1TR 数据手册

 浏览型号1N4678D-1TR的Datasheet PDF文件第1页浏览型号1N4678D-1TR的Datasheet PDF文件第3页 
1N4678 thru 1N4717-1 DO-35  
500 mW AXIAL-LEADED ZENER DIODES  
S C O T T S D A L E D I V I S I O N  
*ELECTRICAL CHARACTERISTICS @ 25ºC  
JEDEC  
NOMINAL  
ZENER  
VOLTAGE  
(Note 3)  
VZ  
ZENER  
MAXIMUM  
MAXIMUM REVERSE  
LEAKAGE CURRENT  
MAXIMUM  
TYPE  
TEST  
VOLTAGE  
REGULATION  
(Note 2 & 3)  
VZ  
DC ZENER  
CURRENT*  
NUMBER  
CURRENT  
(Note 1)  
IZT  
IR @ VR  
IZM  
VOLTS  
1.8  
VOLTS  
0.70  
VOLTS  
1.0  
mA  
µA  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
µA  
7.5  
1N4678  
1N4679  
1N4680  
1N4681  
1N4682  
1N4683  
1N4684  
1N4685  
1N4686  
1N4687  
1N4688  
1N4689  
1N4690  
1N4691  
1N4692  
1N4693  
1N4694  
1N4695  
1N4696  
1N4697  
1N4698  
1N4699  
1N4700  
1N4701  
1N4702  
1N4703  
1N4704  
1N4705  
1N4706  
1N4707  
1N4708  
1N4709  
1N4710  
1N4711  
1N4712  
1N4713  
1N4714  
1N4715  
1N4716  
1N4717  
240  
220  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
90  
2.0  
0.70  
5.0  
1.0  
2.2  
0.75  
4.0  
1.0  
2.4  
0.80  
2.0  
1.0  
2.7  
0.85  
1.0  
1.0  
3.0  
0.90  
0.8  
1.0  
3.3  
0.95  
7.5  
1.5  
3.6  
0.95  
7.5  
2.0  
3.9  
0.97  
5.0  
2.0  
4.3  
0.99  
4.0  
2.0  
4.7  
0.99  
10.0  
10.0  
10.0  
10.0  
10.0  
10.0  
1.0  
3.0  
5.1  
0.97  
3.0  
5.6  
0.96  
4.0  
6.2  
0.95  
5.0  
6.8  
0.90  
5.1  
70  
7.5  
0.75  
5.7  
63.6  
58.0  
54.8  
52.4  
49.6  
43.2  
40.8  
38.0  
35.0  
32.6  
30.8  
29.0  
26.4  
25.0  
23.8  
21.6  
19.8  
19.0  
17.6  
17.0  
15.8  
14.4  
13.2  
12.2  
11.0  
8.2  
0.50  
6.2  
8.7  
0.10  
1.0  
6.6  
9.1  
0.08  
1.0  
6.9  
10.0  
11.0  
12.0  
13.0  
14.0  
15.0  
16.0  
17.0  
18.0  
19.0  
20.0  
22.0  
24.0  
25.0  
27.0  
28.0  
30.0  
33.0  
36.0  
39.0  
43.0  
0.10  
1.0  
7.6  
0.11  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.05  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
0.01  
8.4  
0.12  
9.1  
0.13  
9.8  
0.14  
10.6  
11.4  
12.1  
12.9  
13.6  
14.4  
15.2  
16.7  
18.2  
19.0  
20.4  
21.2  
22.8  
25.0  
27.3  
29.6  
32.6  
0.15  
0.16  
0.17  
0.18  
0.19  
0.20  
0.22  
0.24  
0.25  
0.27  
0.28  
0.30  
0.33  
0.36  
0.39  
0.43  
*JEDEC registered data except IZM has been increased (doubled) for 500 mW power dissipation capabilities  
NOTES: 1. All types as shown are +/-5% tolerance. Also available in 2% and 1% tolerance with suffix C and D respectively.  
2. VZ @ 100µA minus VZ @ 10µA.  
3. The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with 3/8”  
minimum lead length from the base.  
Copyright 2003  
Microsemi  
Page 2  
11-05-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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