1N4561B

更新时间： 2024-01-04 06:27:37

品牌	Logo	应用领域
美高森美 - MICROSEMI		二极管齐纳二极管测试局域网
页数	文件大小	规格书
4页	230K
描述
50 Watt Zener Diodes

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1N4561B 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	TO-3
包装说明：	O-MBFM-P2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.38
Is Samacsys：	N	外壳连接：	CATHODE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JEDEC-95代码：	TO-204AD
JESD-30 代码：	O-MBFM-P2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	FLANGE MOUNT	极性：	UNIDIRECTIONAL
认证状态：	Not Qualified	标称参考电压：	5.6 V
表面贴装：	NO	技术：	ZENER
端子面层：	TIN LEAD	端子形式：	PIN/PEG
端子位置：	BOTTOM	最大电压容差：	1%
工作测试电流：	2250 mA	Base Number Matches：	1

1N4561B 数据手册

1N2804 thru 1N2846B and

1N4557 thru 1N4564B

50 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

NOTES:

The JEDEC type numbers shown (B suffix) have a +/- 5% tolerance on nominal zener voltage. The suffix A is used to identify +/-10%

tolerance; no suffix indicates +/-20% tolerance. If tighter tolerance is required, consult factory. Standard polarity units have the anode

connected to the case. Reverse polarity (cathode-to-case) units are available and are indicated by suffix R in the part number.

Zener Voltage (V_Z) is measured with junction in thermal equilibrium with 30^oC base temperature. The test currents (I_ZT) have been selected

so that at nominal voltages the dissipation is a constant 12.5 watts. This results in a nominal junction temperature rise of 18.75^oC .

The zener impedance is derived from the 60 cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc

zener current (I_ZTor I_ZK) is superimposed on I_ZTor I_ZK. Zener impedance is measured at 2 points to ensure a sharp knee on the breakdown

curve and to eliminate unstable units. A curve showing the variation of zener impedance vs. zener current for six representative types is

shown in Figure 3. Also see MicroNote 202 for further information.

The values of I_ZMare calculated for a +/-5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage

above V_ZTthat results from zener impedance and the increase in junction temperature as power dissipation approaches 50 watts. In the

case of individual diodes, I_ZMis that value of current that results in a dissipation of 50 watts.

GRAPHS AND CIRCUITS

Typical circuit connections for anode-to-case and

cathode-to-case polarities (standard and reverse

polarities, respectively).

Case

Temperature ^oC

FIGURE 2

POWER DERATING CURVE

FIGURE GROUP 3

TYPICAL ZENER IMPEDANCE vs. ZENER CURRENT FOR TYPES SHOWN

Microsemi

Scottsdale Division

Page 3

11-12-2003 REV A

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

1 234

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与1N4561B相关器件

型号	品牌	描述	获取价格	数据表
1N4561BE3	MICROSEMI	Zener Diode, 5.6V V(Z), 5%, 50W, Silicon, Unidirectional, TO-204AD, ROHS COMPLIANT, HERMET	获取价格
1N4561BR	MICROSEMI	暂无描述	获取价格
1N4561C	MICROSEMI	Zener Diode, 5.6V V(Z), 2%, Silicon, Unidirectional, TO-204AD, HERMETIC SEALED, TO-3, 2 PI	获取价格
1N4561C	NJSEMI	Diode Zener Single 5.6V 5% 50W 3-Pin(2+Tab) TO-3	获取价格
1N4561CE3	MICROSEMI	Zener Diode, 5.6V V(Z), 2%, 50W, Silicon, Unidirectional, TO-204AD, ROHS COMPLIANT, HERMET	获取价格
1N4561D	MICROSEMI	Zener Diode, 5.6V V(Z), 1%, Silicon, Unidirectional, TO-204AD, HERMETIC SEALED, TO-3, 2 PI	获取价格

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