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1N4448HWT PDF预览

1N4448HWT

更新时间: 2024-02-13 05:23:36
品牌 Logo 应用领域
美台 - DIODES 二极管开关
页数 文件大小 规格书
3页 69K
描述
SURFACE MOUNT FAST SWITCHING DIODE

1N4448HWT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-F2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.58配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F2元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大重复峰值反向电压:75 V
最大反向恢复时间:0.004 µs表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

1N4448HWT 数据手册

 浏览型号1N4448HWT的Datasheet PDF文件第2页浏览型号1N4448HWT的Datasheet PDF文件第3页 
1N4448HWT  
SURFACE MOUNT FAST SWITCHING DIODE  
SPICE MODEL: 1N4448HWT  
Features  
·
·
·
·
Fast Switching Speed  
Ultra-Small Surface Mount Package  
For General Purpose Switching Applications  
High Conductance  
CATHODE MARK  
SOD-523  
Dim  
A
Min  
1.50  
1.10  
0.25  
0.70  
0.10  
0.50  
Max  
1.70  
1.30  
0.35  
0.90  
0.20  
0.70  
Mechanical Data  
·
Case: SOD-523, Molded Plastic  
Case material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Finish - Matte Tin (Note 1)  
Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Marking Code: T8  
Weight: 0.002 grams (approx.)  
B
·
C
D
·
·
MARKING CODE  
E
G
E
C
D
All Dimensions in mm  
G
·
·
·
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRM  
Non-Repetitive Peak Reverse Voltage  
100  
V
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
80  
VR(RMS)  
IFM  
RMS Reverse Voltage  
57  
V
Forward Continuous Current  
Average Rectified Output Current  
250  
125  
mA  
mA  
IO  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
2.0  
1.0  
IFSM  
A
@ t = 1.0s  
Pd  
Power Dissipation (Note 2)  
150  
833  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Conditions  
V(BR)R  
Reverse Breakdown Voltage (Note 3)  
IR = 100mA  
80  
¾
V
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
0.62  
¾
¾
0.72  
0.855  
1.0  
VF  
Forward Voltage  
V
¾
1.25  
VR = 80V  
100  
50  
nA  
mA  
mA  
nA  
V
V
R = 75V, Tj = 150°C  
R = 25V, Tj = 150°C  
IR  
Peak Reverse Current (Note 3)  
¾
30  
25  
VR = 20V  
VR = 0.5V, f = 1.0MHz  
CT  
trr  
Total Capacitance  
¾
¾
3.0  
4.0  
pF  
ns  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
Reverse Recovery Time  
(Note 4)  
Ordering Information  
Device  
Packaging  
SOD-523  
Shipping  
1N4448HWT-7  
3000/Tape & Reel  
Note:  
1. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability and minimum  
order details.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration pulse test used so as to minimize self-heating effect.  
4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
DS30395 Rev. 1 - 2  
1 of 2  
1N4448HWT  
www.diodes.com  
ã Diodes Incorporated  

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