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1N4448HWT-13 PDF预览

1N4448HWT-13

更新时间: 2024-02-18 16:27:21
品牌 Logo 应用领域
美台 - DIODES 光电二极管
页数 文件大小 规格书
4页 173K
描述
Rectifier Diode, 1 Element, 0.125A, 80V V(RRM), Silicon, GREEN, ULTRA SMALL, PLASTIC PACKAGE-2

1N4448HWT-13 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:GREEN, ULTRA SMALL, PLASTIC PACKAGE-2
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.53配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.72 VJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:1 A元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.125 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.15 W最大重复峰值反向电压:80 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

1N4448HWT-13 数据手册

 浏览型号1N4448HWT-13的Datasheet PDF文件第1页浏览型号1N4448HWT-13的Datasheet PDF文件第3页浏览型号1N4448HWT-13的Datasheet PDF文件第4页 
1N4448HWT  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 7)  
Symbol  
Value  
150  
Unit  
mW  
°C/W  
°C  
PD  
Thermal Resistance Junction to Ambient (Note 7)  
Operating and Storage Temperature Range  
833  
R  
JA  
-65 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Conditions  
Reverse Breakdown Voltage (Note 8)  
80  
V
V(BR)R  
IR = 100A  
IF = 5.0mA  
IF = 10mA  
IF = 100mA  
IF = 150mA  
VR = 80V  
0.62  
0.72  
0.855  
1.0  
Forward Voltage  
V
VF  
1.25  
100  
50  
30  
nA  
μA  
μA  
nA  
V
R = 75V, TJ = +150°C  
VR = 25V, TJ = +150°C  
R = 20V  
Peak Reverse Current (Note 8)  
IR  
25  
V
Total Capacitance  
3.0  
4.0  
pF  
ns  
CT  
trr  
VR = 0.5V, f = 1.0MHz  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100Ω  
Reverse Recovery Time  
Notes:  
7. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.  
8. Short duration pulse test used to minimize self-heating effect.  
1000  
100  
200  
150  
100  
T
= 150°C  
A
T
= 125°C  
A
10  
1
T
T
= 85°C  
= 25°C  
A
A
50  
0
T
= -55°C  
A
0.1  
0
200 400 600 800 1000 1200 1400 1600  
125  
C)  
0
25  
100  
150  
50  
75  
VF, INSTANTANEOUS FORWARD VOLTAGE (mV)  
Fig. 2 Typical Forward Characteristics  
TA, AMBIENT TEMPERATURE (  
Fig. 1 Power Derating Curve  
°
2 of 4  
www.diodes.com  
September 2013  
© Diodes Incorporated  
1N4448HWT  
Document number: DS30395 Rev. 10 - 2  

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