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1N4004G PDF预览

1N4004G

更新时间： 2024-01-06 12:26:17
品牌 Logo 应用领域
DIOTECH 二极管
页数 文件大小 规格书
2页 784K
描述
GENERAL PURPOSE SILICON RECTIFIER

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中文翻译

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1N4004G 技术参数

生命周期：ObsoleteReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.84
Base Number Matches：1

1N4004G 数据手册

 浏览型号1N4004G的Datasheet PDF文件第2页 
1N4001G THRU 1N4007G  
GENERAL PURPOSE SILICON RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 1.0 Ampere  
FEATURES  
DO-41  
●
●
Glass Passivated Die Construction  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Construction utilizes void-free  
molded plastic technique  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
●
1.0 (25.4)  
MIN.  
●
0.107 (2.7)  
0.080 (2.0)  
DIA.  
●
●
250 C/10 seconds,0.375  
”(9.5mm) lead length,  
0.205 (5.2)  
0.160(4.1)  
5 lbs. (2.3kg) tension  
MECHANICAL DATA  
1.0 (25.4)  
MIN.  
Case: JEDEC DO-41 molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
0.034 (0.86)  
0.028 (0.71)  
DIA.  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
Weight:0.012 ounce, 0.33 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
SYMBOLS  
Characteristic  
UNITS  
4006G 4007G  
4001G 4002G 4003G 4004G 4005G  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200 400  
140 280  
200 400  
600  
420  
600  
800 1000  
V
V
V
V
RRM  
RMS  
560  
700  
V
100  
800 1000  
Maximum DC blocking voltage  
V
DC  
Maximum average forward rectified current  
I
(AV)  
1.0  
A
0.375”(9.5mm) lead length at TA=75 C  
Peak forward surge current  
I
FSM  
30.0  
1.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
A
V
F
Maximum instantaneous forward voltage at 1.0A  
V
Maximum DC reverse current  
at rated DC blocking voltage  
T
A
=25 C  
5.0  
50.0  
µA  
I
R
T
A=100 C  
Typical junction capacitance (NOTE 1)  
C
J
pF  
K/W  
C
8.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
R
JA  
STG  
100  
TJ,T  
-65 to +175  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted  
12

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1N4004GH01 RECTRON

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1N4004GH02 RECTRON

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH02-1 RECTRON

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH02-2 RECTRON

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH03-1 RECTRON

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,
1N4004GH03-2 RECTRON

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 		Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41,

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