5秒后页面跳转
1N4003H-T-TP PDF预览

1N4003H-T-TP

更新时间: 2024-01-09 02:12:00
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 180K
描述
Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, DO-41, 2 PIN

1N4003H-T-TP 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

1N4003H-T-TP 数据手册

 浏览型号1N4003H-T-TP的Datasheet PDF文件第2页浏览型号1N4003H-T-TP的Datasheet PDF文件第3页浏览型号1N4003H-T-TP的Datasheet PDF文件第4页 
M C C  
1N4001  
THRU  
1N4007  
Micro Commercial Components  
TM  
20736 Marilla Street Chatsworth  
ꢀꢁꢂꢃꢄꢅꢄꢄ  
ꢆꢇꢈꢉꢊꢋꢂꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢅ  
$ꢏ%ꢋꢂ   ꢌꢍꢄꢍ ꢂ!ꢎꢄ"#ꢃꢅꢃ  
Micro Commercial Components  
Features  
Low Current Leakage and Low Cost  
Lead Free Finish/RoHS Compliant (Note1)  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
("P"Suffix designates  
1 Amp Rectifier  
50 - 1000 Volts  
·
·
Maximum Ratings  
DO-41  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance: 25°C/W Junction to Lead at 0.375"  
Lead Length P.C.B. Mounted  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
D
1N4001  
1N4002  
1N4003  
1N4004  
1N4005  
1N4006  
1N4007  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
1N4001  
1N4002  
1N4003  
1N4004  
1N4005  
1N4006  
1N4007  
100V  
200V  
400V  
600V  
800V  
1000V  
A
Cathode  
140V  
280V  
420V  
560V  
700V  
Mark  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
TA = 75°C  
C
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
IR  
1.1V  
IFM = 1.0A;  
TJ = 25°C*  
DIMENSIONS  
INCHES  
MIN  
.166  
.080  
.028  
MM  
MIN  
4.10  
2.00  
.70  
DIM  
A
B
C
D
MAX  
.205  
.107  
.034  
---  
MAX  
5.20  
2.70  
.90  
NOTE  
5.0µA  
50µA  
TJ = 25°C  
TJ = 125°C  
1.000  
25.40  
---  
Typical Junction  
Capacitance  
Maximum Reverse  
Recovery Time  
CJ  
Trr  
15pF  
Measured at  
1.0MHz, VR=4.0V  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
2.0us  
*Pulse test: Pulse width 300 µsec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 4  
Revision: A  
2011/01/01  

与1N4003H-T-TP相关器件

型号 品牌 描述 获取价格 数据表
1N4003ID NXP Rectifiers

获取价格

1N4003IDT/R NXP DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, Signal Diode

获取价格

1N4003L DIODES 1.0A RECTIFIER

获取价格

1N4003L GOOD-ARK 1.0 AMP.GLASS PASSIVATED RECTIFIERS

获取价格

1N4003LEADFREE CENTRAL Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41, DO-41, 2 PIN

获取价格

1N4003-LFR FRONTIER 1A GENERAL PURPOSE PLASTIC RECTIFIER

获取价格