Datasheet > 1N4003-PJ

1N4003-PJ

更新时间： 2025-03-15 02:50:07

品牌	Logo	应用领域
平晶微 - PJSEMI		/
页数	文件大小	规格书
3页	651K
描述
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERS

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1N4003-PJ 数据手册

1N4001-PJ THRU 1N4007-PJ

SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERS

Forward current-1.0A

Reverse voltage-50V to1000V

FEATURES

 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

 Construction utilizes void-free molded plastic technique

 Low reverse leakage current

 High forward surge current capability

 High temperature soldering guaranteed:

250℃/10 seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension

MECHANICAL DATA

 Case：JEDEC DO-41 molded plastic body

 Terminals: Plated axial leads,solderable per MIL-STD-750,Method 2026

 Polarity: Color band denotes cathode end

DO-41

 Weight: Approximated 0.33 grams

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derating by 20 %

PARAMETER

SYMBOL 1N4001-PJ 1N4002-PJ 1N4003-PJ 1N4004-PJ 1N4005-PJ 1N4006-PJ1N4007-PJ UNIT

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

100

1000

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

I_F(AV)

1.0

Current at T_A=55℃

I_FSM

V_F

Peak Forward Surge Current (Note1)

Maximum Forward Voltage at 1.0A

1.1

Maximum DC Reverse Current

at Rated DC Blocking Voltage T_A=25℃

I_R

μA

T_A=100℃

C_J

Junction Capacitance (Note2)

Thermal Resistance (Note3)

R_θJA

℃/W

T_J,T_STG

-55to +150

Operating and Storage Temperature Range

℃

Notes: 1. Measured at 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) .

2. Measured at 1MHz and applied reverse voltage of 4.0 D.C.

3. P.C.B.mounted with 2.0 " × 2.0 " (5×5 cm) copper pad areas.

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Revision:1.0 Oct-2017

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