Datasheet > 1N4002GPE/100

1N4002GPE/100

更新时间： 2023-01-03 10:42:09

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	36K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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1N4002GPE/100 数据手册

1N4001GP thru 1N4007GP

Vishay Semiconductors

formerly General Semiconductor

Ratings and

Characteristic Curves (T_A= 25°C unless otherwise noted)

Fig. 2 – Maximum Non-Repetitive

Peak Forward Surge Current

Fig. 1 – Forward Current Derating Curve

5.0

1.0

T_J= T_Jmax

8.3ms Single Half Sine-Wave

(JEDEC Method)

60H_ZResistive or

Inductive Load

0.8

0.6

0.4

0.2

0.375" (9.5mm)

Lead Length

100

125

150

175

Ambient Temperature (°C)

Number of Cycles at 60H

Fig. 3 – Typical Instantaneous

Forward Characteristics

Fig. 4 –Typical Reverse Characteristics

T_J= 100°C

T_J= 25°C

Pulse Width = 300µs

1% Duty Cycle

0.1

0.01

0.1

T_J= 25°C

0.01

0.6

0.8

1.0

1.2

1.4

1.6

100

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Forward Voltage (V)

Fig. 6 – Typical Transient Thermal

Impedance

Fig. 5 – Typical Junction Capacitance

100

T_J= 25°C

f = 1.0MH_Z

Vsig = 50mVp-p

0.1

0.01

100

0.1

100

Reverse Voltage (V)

t -- Pulse Duration (sec)

www.vishay.com

Document Number 88504

08-Jul-03

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