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1N3508AE3 PDF预览

1N3508AE3

更新时间: 2024-01-25 11:24:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试二极管
页数 文件大小 规格书
2页 116K
描述
Zener Diode, 3.9V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2

1N3508AE3 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.72
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-35JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM极性:UNIDIRECTIONAL
最大功率耗散:0.5 W标称参考电压:3.9 V
表面贴装:NO技术:ZENER
端子形式:WIRE端子位置:AXIAL
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N3508AE3 数据手册

 浏览型号1N3508AE3的Datasheet PDF文件第1页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01844  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Website: http: //www.microsemi.com  
400mW  
ZENER VOLTAGE REGULATOR DIODE  
ELECTRICAL CHARACTERISTICS (CONT.) (TA = 25°C, unless otherwise specified)  
Zener Voltage @ Izt  
Volts @ mA  
Zener Voltage  
Tolerance  
Max Zener Impedance @ Izt  
Ohms  
Power Rating  
Zener Type #  
1N3532A  
1N3533A  
1N3534A  
39.0  
43.0  
47.0  
3.0  
2.0  
2.0  
5%  
5%  
5%  
100.0  
130.0  
150.0  
400mW  
400mW  
400mW  
NOTE 1 : Zener Voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25oC + 3oC.  
NOTE 2 : Zener impedance is derived by superimposing on IZT A 60Hz rms a.c. current equal to 10% of IZT.  
NOTE 3 : ΔVZ is the maximum difference between VZ at IZT and VZ at IZT measured with the device junction in thermal  
equilibrium.  
DESIGN DATA  
CASE: DO-35 Hermetically sealed glass case.  
LEAD FINISH : Tin/ Lead  
Cathode band denotes polarity  
LDS-0063 Rev. 2 (091964)  
Page 2 of 2  

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