1KSMBJ33C

更新时间： 2024-01-29 05:59:53

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力特 - LITTELFUSE		瞬态抑制器二极管光电二极管局域网
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1KSMBJ33C 数据手册

Silicon Avalanche Diodes

1000W Surface Mount Transient Voltage Suppressor

RoHS

1KSMBJ Series

ELECTRICAL SPECIFICATION @ Tamb 25°C

Breakdow n

Voltage

VBR (Volts) @ IT

Maximum

Reverse

Leakage

IR @ VR

(µA)

Maximum

Clamping

Voltage

VC @ IPP

(Volts)

Maximum

Peak Pulse

Current

IPP

Device

Code

Part

Number

Reverse

Stand Off

Voltage

(mA)

(A)

(Volts)

MIN

MAX

1KSMBJ 39

O10K

O10L

O10M

O10N

O10O

O10P

O10Q

O10R

O10S

O10T

O10U

O10V

O10W

O10X

O10Y

O10Z

P10A

P10B

P10C

P10D

P10E

P10F

31.6

33.3

34.8

36.8

38.1

40.2

41.3

43.6

45.4

47.8

50.2

53.0

55.1

58.1

60.7

64.1

66.4

70.1

73.7

77.8

81.0

85.5

89.2

94.0

97.2

102.0

105.0

111.0

121.0

128.0

130.0

136.0

35.1

37.1

38.7

40.9

42.3

44.7

45.9

48.5

50.4

53.2

55.8

58.9

61.2

64.6

67.5

71.3

73.8

77.9

81.9

86.5

90.0

95.0

99.0

105.0

108.0

114.0

117.0

124.0

135.0

143.0

144.0

152.0

42.9

41.0

1.0

5.0

56.4

53.9

17.5

18.7

16.0

16.8

14.8

15.5

13.7

14.3

12.3

13.0

11.3

11.8

10.2

10.8

9.2

1KSMBJ 39A

1KSMBJ 43

1.0

47.3

61.9

1KSMBJ 43A

1KSMBJ 47

45.2

59.3

51.7

67.8

1KSMBJ 47A

1KSMBJ 51

49.4

64.8

56.1

73.5

1KSMBJ 51A

1KSMBJ 56

53.6

70.1

61.6

80.5

1KSMBJ 56A

1KSMBJ 62

58.8

77.0

68.2

89.0

1KSMBJ 62A

1KSMBJ 68

65.1

85.0

74.8

98.0

1KSMBJ 68A

1KSMBJ 75

71.4

92.0

82.5

108.0

103.0

118.0

113.0

131.0

125.0

144.0

137.0

158.0

152.0

173.0

165.0

187.0

179.0

215.0

207.0

230.0

219.0

1KSMBJ 75A

1KSMBJ 82

78.8

9.7

90.2

8.5

1KSMBJ 82A

1KSMBJ 91

86.1

8.8

100.0

95.5

7.5

1KSMBJ 91A

1KSMBJ 100

1KSMBJ 100A

1KSMBJ 110

1KSMBJ 110A

1KSMBJ 120

1KSMBJ 120A

1KSMBJ 130

1KSMBJ 130A

1KSMBJ 150

1KSMBJ 150A

1KSMBJ 160

1KSMBJ 160A

8.0

110.0

105.0

121.0

116.0

132.0

126.0

143.0

137.0

165.0

158.0

176.0

168.0

7.0

7.3

P10G

P10H

P10I

6.3

6.6

5.8

P10J

6.1

P10K

P10L

P10M

P10N

P10O

P10P

5.3

5.6

4.7

4.8

4.3

4.6

Notes:

1. All testing is performed at Tamb = 25˚C (+/- 3˚C)

2. Bv is measured using a pulse of 20 milliseconds or less

3. Ir is doubled for Bi-directional devices only with VR equal or less than 10 volts

4. Peak Pulse Current is quoted @ 10/1000 µsec

5. All parameters are stated as tested on a FET Tester Model 3400

6. Vf, for uni-directional devices, is measured using a 300 microsecond square wave pulse @ IT = 50A

272

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