1N5365B

更新时间： 2024-02-23 05:31:35

品牌	Logo	应用领域
安森美 - ONSEMI		二极管测试
页数	文件大小	规格书
8页	74K
描述
5 Watt Surmetic 40 Zener Voltage Refulators

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N5365B 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	包装说明：	O-PALF-W2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.48	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	ZENER DIODE	JESD-30 代码：	O-PALF-W2
JESD-609代码：	e0	湿度敏感等级：	1
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	LONG FORM	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性：	UNIDIRECTIONAL	最大功率耗散：	5 W
标称参考电压：	36 V	表面贴装：	NO
技术：	ZENER	端子面层：	TIN LEAD
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	最大电压容差：	20%
工作测试电流：	30 mA	Base Number Matches：	1

1N5365B 数据手册

1N5333B Series

100

0.1

100

120

140

160

180

200

220

V , ZENER VOLTAGE (VOLTS)

Figure 9. Zener Voltage versus Zener Current

V_Z= 82 thru 200 Volts

APPLICATION NOTE

Since the actual voltage available from a given Zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

For worst-case design, using expected limits of I , limits

of P and the extremes of T (DT ) may be estimated.

Changes in voltage, V , can then be found from:

DV = q_VZDT_J

, the Zener voltage temperature coefficient, is found

Lead Temperature, T , should be determined from:

from Figures 2 and 3.

T_L= q_LAP_D+ T_A

Under high power-pulse operation, the Zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

is the lead-to-ambient thermal resistance and P is the

power dissipation.

Junction Temperature, T , may be found from:

T_J= T_L+ DT_JL

Data of Figure 4 should not be used to compute surge

capability. Surge limitations are given in Figure 5. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 5 be exceeded.

DT is the increase in junction temperature above the lead

temperature and may be found from Figure 4 for a train of

power pulses or from Figure 1 for dc power.

DT_JL= q_JLP_D

http://onsemi.com

1...4 5 678

下载PDF

与1N5365B相关器件

型号	品牌	描述	获取价格	数据表
1N5365B(36V)	ETC	Zener Diodes	获取价格
1N5365B/TR12	MICROSEMI	DIODE ZENER 36V 5W T18	获取价格
1N5365B/TR8	MICROSEMI	暂无描述	获取价格
1N5365B-A	DIODES	Zener Diode, 36V V(Z), 5%, 5W, Silicon, Unidirectional	获取价格
1N5365BE	MCC	5 Watt Zener Diode 11 to 200 Volts	获取价格
1N5365BE3/TR	MICROSEMI	Zener Diode, 36V V(Z), 5%, 5W, Silicon, Unidirectional, ROHS COMPLIANT, PLASTIC, T-18, 2 P	获取价格