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1N5365B PDF预览

1N5365B

更新时间: 2024-02-20 09:42:22
品牌 Logo 应用领域
安森美 - ONSEMI 二极管测试
页数 文件大小 规格书
8页 74K
描述
5 Watt Surmetic 40 Zener Voltage Refulators

1N5365B 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.48外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:5 W
标称参考电压:36 V表面贴装:NO
技术:ZENER端子面层:TIN LEAD
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:20%
工作测试电流:30 mABase Number Matches:1

1N5365B 数据手册

 浏览型号1N5365B的Datasheet PDF文件第1页浏览型号1N5365B的Datasheet PDF文件第2页浏览型号1N5365B的Datasheet PDF文件第4页浏览型号1N5365B的Datasheet PDF文件第5页浏览型号1N5365B的Datasheet PDF文件第6页浏览型号1N5365B的Datasheet PDF文件第7页 
1N5333B Series  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, V = 1.2 V Max @ I = 1.0 A for all types)  
A
F
F
Leakage  
Current  
Zener Voltage (Note 2)  
Zener Impedance (Note 2)  
I
R
DV  
I
ZM  
Z
V (Volts)  
@ I  
Z
ZT  
@ I  
W
Z
ZK  
@ I  
I
I @ V  
R R  
(Note 3) (Note 4) (Note 5)  
Z
ZT  
ZT  
ZK  
ZK  
Device  
(Note 1)  
Device  
Marking  
Min Nom Max  
mA  
W
mA mA Max Volts  
A
Volts  
mA  
1N5333B 1N5333B 3.14  
1N5334B 1N5334B 3.42  
1N5335B 1N5335B 3.71  
1N5336B 1N5336B 4.09  
1N5337B 1N5337B 4.47  
3.3  
3.6  
3.9  
4.3  
4.7  
3.47  
3.78  
4.10  
4.52  
4.94  
380  
350  
320  
290  
260  
3
400  
500  
500  
500  
450  
1
1
1
1
1
300  
150  
50  
10  
5
1
1
1
1
1
20  
0.85  
0.8  
0.54  
0.49  
0.44  
1440  
1320  
1220  
1100  
1010  
2.5  
2
2
18.7  
17.6  
16.4  
15.3  
2
1N5338B 1N5338B 4.85  
1N5339B 1N5339B 5.32  
1N5340B 1N5340B 5.70  
1N5341B 1N5341B 5.89  
1N5342B 1N5342B 6.46  
5.1  
5.6  
6.0  
6.2  
6.8  
5.36  
5.88  
6.30  
6.51  
7.14  
240  
220  
200  
200  
175  
1.5  
1
1
1
1
400  
400  
300  
200  
200  
1
1
1
1
1
1
1
1
1
10  
1
2
3
3
5.2  
14.4  
13.4  
12.7  
12.4  
11.5  
0.39  
0.25  
0.19  
0.1  
930  
865  
790  
765  
700  
0.15  
1N5343B 1N5343B 7.13  
1N5344B 1N5344B 7.79  
1N5345B 1N5345B 8.27  
1N5346B 1N5346B 8.65  
1N5347B 1N5347B 9.50  
7.5  
8.2  
8.7  
9.1  
10  
7.88  
8.61  
9.14  
9.56  
10.5  
175  
150  
150  
150  
125  
1.5  
1.5  
2
2
2
200  
200  
200  
150  
125  
1
1
1
1
1
10  
10  
10  
7.5  
5
5.7  
6.2  
6.6  
6.9  
7.6  
10.7  
10  
9.5  
9.2  
8.6  
0.15  
0.2  
0.2  
0.22  
0.22  
630  
580  
545  
520  
475  
1N5348B 1N5348B 10.45  
1N5349B 1N5349B 11.4  
1N5350B 1N5350B 12.35  
1N5351B 1N5351B 13.3  
1N5352B 1N5352B 14.25  
11  
12  
13  
14  
15  
11.55 125  
12.6 100  
13.65 100  
2.5  
2.5  
2.5  
2.5  
2.5  
125  
125  
100  
75  
1
1
1
1
1
5
2
1
1
1
8.4  
9.1  
9.9  
10.6  
11.5  
8.0  
7.5  
7.0  
6.7  
6.3  
0.25  
0.25  
0.25  
0.25  
0.25  
430  
395  
365  
340  
315  
14.7  
100  
15.75  
75  
75  
1N5353B 1N5353B 15.2  
1N5354B 1N5354B 16.15  
1N5355B 1N5355B 17.1  
1N5356B 1N5356B 18.05  
16  
17  
18  
19  
20  
16.8  
17.85  
18.9  
19.95  
21  
75  
70  
65  
65  
65  
2.5  
2.5  
2.5  
3
75  
75  
75  
75  
75  
1
1
1
1
1
1
12.2  
12.9  
13.7  
14.4  
15.2  
6.0  
5.8  
5.5  
5.3  
5.1  
0.3  
0.35  
0.4  
0.4  
0.4  
295  
280  
264  
250  
237  
0.5  
0.5  
0.5  
0.5  
1N5357B 1N5357B  
19  
3
1N5358B 1N5358B 20.9  
1N5359B 1N5359B 22.8  
1N5360B 1N5360B 23.75  
1N5361B* 1N5361B 25.65  
1N5362B 1N5362B 26.6  
22  
24  
25  
27  
28  
23.1  
25.2  
26.25  
28.35  
29.4  
50  
50  
50  
50  
50  
3.5  
3.5  
4
5
6
75  
1
1
1
1
1
0.5  
0.5  
0.5  
0.5  
0.5  
16.7  
18.2  
19  
20.6  
21.2  
4.7  
4.4  
4.3  
4.1  
3.9  
0.45  
0.55  
0.55  
0.6  
216  
198  
190  
176  
170  
100  
110  
120  
130  
0.6  
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.  
1. TOLERANCE AND TYPE NUMBER DESIGNATION  
The JEDEC type numbers shown indicate a tolerance of ±5%.  
2. ZENER VOLTAGE (V ) and IMPEDANCE (I and I )  
Z
ZT  
ZK  
Test conditions for zener voltage and impedance are as follows: I is applied 40 ±10 ms prior to reading. Mounting contacts are located 3/8″  
Z
to 1/2from the inside edge of mounting clips to the body of the diode (T = 25°C +8°C, −2°C).  
A
3. SURGE CURRENT (I )  
R
Surge current is specified as the maximum allowable peak, non−recurrent square−wave current with a pulse width, PW, of 8.3 ms. The data  
given in Figure 5 may be used to find the maximum surge current for a square wave of any pulse width between 1 ms and 1000 ms by plotting  
the applicable points on logarithmic paper. Examples of this, using the 3.3 V and 200 V zener are shown in Figure 6. Mounting contact located  
as specified in Note 2 (T = 25°C +8°C, −2°C).  
A
4. VOLTAGE REGULATION (DV )  
Z
The conditions for voltage regulation are as follows: V measurements are made at 10% and then at 50% of the I max value listed in the  
Z
Z
electrical characteristics table. The test current time duration for each V measurement is 40 ±10 ms. Mounting contact located as specified  
Z
in Note 2 (T = 25°C +8°C, −2°C).  
A
5. MAXIMUM REGULATOR CURRENT (I  
)
ZM  
The maximum current shown is based on the maximum voltage of a 5% type unit, therefore, it applies only to the B−suffix device. The actual  
for any device may not exceed the value of 5 watts divided by the actual V of the device. T = 75°C at 3/8maximum from the device  
I
ZM  
Z
L
body.  
*Not Available in the 2000/Ammo Pack.  
http://onsemi.com  
3
 

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