Datasheet > 1812SMS--82NJ

1812SMS--82NJ

更新时间： 2022-06-05 22:21:58

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
19页	1190K
描述
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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1812SMS--82NJ 数据手册

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD22--A113, IPC/JEDEC J--STD--020

260

°C

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

2.5

—

μAdc

Vdc

DSS

(V = 100 Vdc, V = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(V = 50 Vdc, V = 0 Vdc)

Drain--Source Breakdown Voltage

(I = 150 mA, V = 0 Vdc)

110

—

(BR)DSS

Gate--Source Leakage Current

μAdc

GSS

(V = 5 Vdc, V = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(V = 10 Vdc, I = 800 μAdc)

1.63

2.6

Vdc

GS(th)

GS(Q)

DS(on)

Gate Quiescent Voltage

(V = 50 Vdc, I = 900 mAdc, Measured in Functional Test)

1.5

—

3.5

—

Drain--Source On--Voltage

(V = 10 Vdc, I = 2 Adc)

0.28

Dynamic Characteristics

Reverse Transfer Capacitance

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

—

2.88

120

268

—

rss

Output Capacitance

(V = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)

oss

Input Capacitance

iss

(V = 50 Vdc, V = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 50 Vdc, I = 900 mA, P = 300 W, f = 220 MHz, CW

out

Power Gain

25.5

—

-- 9

Drain Efficiency

Input Return Loss

IRL

—

-- 1 6

Typical Performances (In Freescale 27 MHz and 450 MHz Test Fixtures, 50 ohm system) V = 50 Vdc, I = 900 mA, P = 300 W CW

out

Power Gain

f = 27 MHz

f = 450 MHz

—

31.4

21.7

—

Drain Efficiency

Input Return Loss

f = 27 MHz

f = 450 MHz

—

61.5

59.1

—

f = 27 MHz

f = 450 MHz

IRL

—

--17.4

--24.4

—

ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations

must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which

exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263

(for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to

ensure proper mounting of these devices.

MRF6V2300NR1 MRF6V2300NBR1

RF Device Data

Freescale Semiconductor

123 4 5 6 7...19

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