Datasheet > 1720-2

1720-2

更新时间： 2024-01-01 11:31:37

品牌	Logo	应用领域
其他 - ETC		/
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BJT

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1720-2 数据手册

1720 - 2

2 Watt - 28 Volts, Class C

Microwave 1700 - 2000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

The 1720-2 is a COMMON BASE transistor capable of providing 2 Watts of

Class C, RF output power over the band 1700-2000 MHz. This transistor is

designed for Microwave Broadband Class C amplifier applications. It includes

Input prematching and utilizes Gold metalization and diffused ballasting to

provide high reliagility and supreme ruggedness.

55LT, STYLE 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

11.6 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

3.5 Volts

0.5 Amps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to +150^oC

+200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

2.0

7.5

Watt

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 2.0 GHz

Pout

0.35

10:1

Vcb = 28 Volts

Pin =.35 Watts

As Above

η_c

VSWR₁

F = 2.0GHz, Pin = .35

Collector to Emitter Breakdown Ic = 20 mA

3.5

Volts

BVces

BVebo

H_FE

Emitter to Base Breakdown

Current Gain

Ie = 0.25 mA

Vce = 5 V, Ic = 100 mA

F =1.0 MHz, Vcb = 28 V

Output Capacitance

Thermal Resistance

4.5

Cob

^oC/W

θjc

Issue February 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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