Datasheet > 1720-20

1720-20

更新时间： 2024-01-22 18:42:08

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1720-20 数据手册

1720 - 20

20 Watt - 28 Volts, Class C

Microwave 1700 - 2000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

The 1720-20 is a COMMON BASE transistor capable of providing 20 Watts

of Class C, RF output power over the band 1700-2000 MHz. This transistor is

designed for Microwave Broadband Class C amplifier applications. It includes

Input and Output prematching and utilizes Gold metalization and diffused

ballasting to provide high reliability and supreme ruggedness. The transistor

uses a fully hermetic High Temperature Solder sealed package.

55AW, STYLE1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC

67 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

3.5 Volts

6.0 A

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Watt

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 2.0 GHz

Pout

5.0

Vcb = 28 Volts

Pin = 5.0 Watts

As Above

6.0

6.5

η_c

VSWR₁

10:1

F = 2.0 GHz, Pin = 5.0

Collector to Emitter

Breakdown

Collector to Base Breakdown

Emitter to Base Breakdown

Collector to Base Current

Current Gain

Ic = 10 mA

Ie = 1.0 mA

Vcb = 28 Volts

Vce = 5 V, Ic = 1.2 A

F =1 MHz, Vcb = 28 V

3.5

Volts

BVces

BVcbo

BVebo

Icbo

h_FE

Cob

4.0

2.6

µA

^oC/W

Output Capacitance

Thermal Resistance

θjc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

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