Datasheet > 16T06AB

16T06AB

更新时间： 2022-02-26 09:02:15

品牌	Logo	应用领域
尼尔 - NELLSEMI		三端双向交流开关
页数	文件大小	规格书
7页	661K
描述
TRIACs

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数据手册

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16T06AB 数据手册

RoHS

16T Series

SEMICONDUCTOR

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUE

UNIT

T_c= 100ºC

TO-220/TO-263

I_T(RMS)

RMS on-state current (full sine wave)

TO-220insulate/TO-220F (ITO-220AB) T_c= 86ºC

F =50 Hz

F =60 Hz

t = 20 ms

160

168

128

Non repetitive surge peak on-state

I_TSM

current (full cycle, T initial = 25°C)

t = 16.7 ms

I²t Value for fusing

I²t

A²s

= 10 ms

Critical rate of rise of on-state current

I_G= 2xl_GT, t_r≤100ns

T_j=125ºC

A/µs

dI/dt

F =100 Hz

T_p=20 µs

T_j=125ºC

Peak gate current

I_GM

P_G(AV)

T_stg

Average gate power dissipation

Storage temperature range

- 40 to 150

- 40 to 125

ºC

T_j

Operating junction temperature range

ELECTRICAL CHARACTERISTICS (T_J= 25 ºC unless otherwise specified)

SNUBBERLESS and Logic level (3 quadrants)

16Txxxx

QUADRANT

SYMBOL

TEST CONDITIONS

Unit

(1)

I_GT

I - II - III

MAX.

V_D= 12 V, R_L= 33Ω

V_GT

1.3

V_D= V_DRM, R_L= 3.3KΩ

T_j= 125°C

V_GD

MIN.

MAX.

MIN.

I - II - III

0.2

(2)

I_T= 500 mA

I_H

I - III

I_G= 1.2 I_GT

I_L

dV/dt⁽²⁾

V_D= 67% V_DRMgate open ,T_j= 125°C

V/µs

500

1000

(dV/dt)c = 0.1 V/µs

(dV/dt)c = 10 V/µs

T_j= 125°C

8.5

(dI/dt)c⁽²⁾

MIN.

A/ms

Without snubber

8.5

Note 1: Minimum l_GTis guaranted at 5% of l_GTmax.

Note 2: For both polarities of A2 referenced to A1.

ELECTRICAL CHARACTERISTICS (T_J= 25 ºC unless otherwise specified)

Standard (4 quadrants)

16Txxxx

QUADRANT

SYMBOL

TEST CONDITIONS

UNIT

I - II - III

(1)

I_GT

MAX.

V_D= 12 V, R_L= 33Ω

100

V_GT

V_GD

1.3

0.2

ALL

V_D= V_DRM, R_L= 3.3KΩ, T_j= 125°C

I_T= 500 mA

(2)

I_H

MAX.

I - III - IV

I_L

I_G= 1.2 I_GT

120

400

dV/d_t⁽²⁾

MIN.

200

V_D= 67% V_DRM, gate open, T_j= 125°C

(dI/dt)c = 7 A/ms, T_j= 125°C

V/µs

(dV/dt)c⁽²⁾

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