RoHS
RoHS
150FD(R)Series
SEMICONDUCTOR
Nell High Power Products
Fig.4 Forward power loss characteristics
300
250
200
180°
120°
90°
RMS Limit
DC
60°
30°
200
Conduction Period
100
50
T
= 175°C
J
0
150 200 250 300
100
120
140
160
180
0
50
100
Average Forward Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig.5 Maximum non-repetitive surge current
Fig.6 Maximum non-repetitive surge current
4000
3500
Maximum non repetitive surge current
versus pulse train duration.
Control of conduction may not be maintained.
At any rated load condition and with
rated vrrm applied following surge.
3500
3000
2500
2000
1500
1000
500
lnitial TJ =175°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
3000
2500
2000
1500
1000
500
lnitial T = 175°C
J
no voltage reapplied @ 50 Hz
rated V
reapplied @ 50 Hz
rrm
Per Junction
Per Junction
1
10
100
0.01
0.1
Pulse train duration (S)
1
Number of equal amplitude half cycle
current pulses(N)
Fig.7 Forward voltage drop characteristics
Fig.8 Thermal lmpedance RthJC characteristic
10000
1
0.1
Steady State Value
RthJC = 0.3 K/W
(DC Operation)
1000
100
TJ = 25°C
0.01
TJ = 175°C
0.001
0.01
0.1
1
10
Square wave pulse duration (S)
10
0.5
1
1.5
2
2.5
3
Instantaneous forward voltage (V)
Page 4 of 6
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