Datasheet > 14N40KG-TF2-T

14N40KG-TF2-T

更新时间： 2022-02-26 09:56:14

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描述
N-CHANNEL POWER MOSFET

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数据手册

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14N40KG-TF2-T 数据手册

14N40K-MT

Preliminary

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

400

±30

UNIT

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current (Note 2)

Avalanche Current (Note 2)

Single Pulsed Avalanche Energy (Note 3)

Peak Diode Recovery dv/dt (Note 4)

TO-220

I_DM

I_AR

E_AS

535

4.5

V/ns

dv/dt

150

Power Dissipation (T_C=25°C)

TO-220F/TO-220F1

TO-220F2

1.2

P_D

TO-220

W/°C

Derate above 25°C

TO-220F/TO-220F1

TO-220F2

0.32

Junction Temperature

Storage Temperature

T_J

+150

°C

T_STG

-55~+150

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 5.46mH, I_AS= 14A, V_DD= 50V, R_G= 25Ω, Starting T_J= 25°C

4. I_SD≤14A, di/dt ≤200A/μs, V_DD≤ BV_DSS, Starting T_J= 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

62.5

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JA

TO-220

0.83

θ_JC

TO-220F/TO-220F1

TO-220F2

3.125

°С/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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