BYW52, BYW53, BYW54, BYW55, BYW56
Standard Avalanche Sinterglass
Vishay Semiconductors
Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX
UNIT
V
Forward voltage
IF = 1 A
VF
IR
-
-
-
-
-
-
-
-
0.9
0.1
5
1
1
VR = VRRM
μA
μA
V
Reverse current
VR = VRRM, Tj = 100 °C
IR = 100 μA, tp/T = 0.01, tp = 0.3 ms
VR = 4 V, f = 1 MHz
IR
10
1600
-
Breakdown voltage
Diode capacitance
V(BR)
CD
trr
-
18
-
pF
μs
IF = 0.5 A, IR = 1 A, iR = 0.25 A
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V
lF = 1 A, dI/dt = 5 A/μs
4
Reverse recovery time
trr
-
4
μs
Reverse recovery charge
Qrr
-
200
nC
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
0.0
l
l
VR = VRRM
half sine wave
RthJA = 45 K/W
l = 10 mm
TL = constant
RthJA = 100 K/W
PCB: d = 25 mm
0
5
10
15
20
25
30
0
20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
949101
l - Lead Length (mm)
16351
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs.
Ambient Temperature
10
1000
VR = VRRM
Tj = 175 °C
1
100
Tj = 25 °C
0.1
10
1
0.01
0.001
0.0
0.4
0.8
1.2
1.6
25
50
75
100
125
150
175
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
16352
16350
Fig. 4 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Document Number: 86049
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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