BYW52, BYW53, BYW54, BYW55, BYW56
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristics
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: SOD-57
APPLICATIONS
• Rectification, general purpose
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYW52
BYW53
BYW54
BYW55
BYW56
VR = 200 V; IFAV = 2 A
VR = 400 V; IFAV = 2 A
VR = 600 V; IFAV = 2 A
VR = 800 V; IFAV = 2 A
V
R = 1000 V; IFAV = 2 A
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
PART
BYW52
BYW53
BYW54
BYW55
BYW56
SYMBOL
VALUE
200
400
600
800
1000
50
UNIT
V
V
V
V
V
V
R = VRRM
R = VRRM
R = VRRM
R = VRRM
R = VRRM
IFSM
V
Reverse voltage = repetitive peak
reverse voltage
V
V
V
Peak forward surge current
Repetitive peak forward current
Average forward current
A
IFRM
12
A
ϕ = 180 °
IFAV
2
A
Pulse avalanche peak power
tp = 20 μs half sine wave, Tj = 175 °C
PR
1000
W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
i2t-rating
l
(BR)R = 1 A, Tj = 175 °C
ER
i2t
20
mJ
A2s
°C
8
Junction and storage temperature
range
Tj = Tstg
- 55 to + 175
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
On PC board with spacing 25 mm
RthJA
45
K/W
K/W
Junction ambient
RthJA
100
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86049
Rev. 1.7, 25-Aug-10