Datasheet > 13002U

13002U

更新时间： 2023-12-06 20:09:56

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
2页	97K
描述
小信号晶体管

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13002U 数据手册

13002U

NPN Silicon Epitaxial Planar Transistor

High voltage power transistor

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

700

400

0.2

Collector Current

Collector Current (Pulse)

Total Power Dissipation

Operating Junction Temperature

Storage Temperature Range

I_CP

0.5

P_tot

0.6

℃

T_j

150

T_stg

- 55 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

Min.

Max.

Unit

DC Current Gain

at V_CE= 10 V, I_C= 10 µA

at V_CE= 10 V, I_C= 100 mA

at V_CE= 10 V, I_C= 200 mA

h_FE

Collector Base Cutoff Current

at V_CB= 700 V

I_CBO

100

µA

Emitter Base Cutoff Current

at V_EB= 7 V

I_EBO

Collector Base Breakdown Voltage

at I_C= 10 mA

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

700

400

Collector Emitter Breakdown Voltage

at I_C= 1 mA

Emitter Base Breakdown Voltage

at I_E= 1 mA

Collector Emitter Saturation Voltage

at I_C= 100 mA, I_B= 10 mA

at I_C= 200 mA, I_B= 20 mA

V_CE(sat)

0.5

2.5

Transition Frequency

at V_CE= 10 V, I_C= 100 mA

f_T

MHz

Dated: 24/03/2016 Rev: 03

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