12SQ030 - 12SQ100
SCHOTTKY BARRIER RECTIFIER DIODE
VOLTAGE RANGE: 30- 100V
CURRENT: 12 A
Features
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Metal of silicon rectifier , majority carrier conduction
Guard ring for transient protection
Low power loss,high efficiency
High current capability,low VF
A
B
A
High surge capacity
C
D
Mechanical Data
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Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
DO-201AD
Min
Dim
A
Max
¾
25.40
7.20
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B
9.50
1.30
5.30
C
1.20
D
4.80
Marking: Type Number
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Symbol
Characteristic
Unit
V
12SQ030 12SQ035 12SQ040 12SQ045 12SQ050 12SQ060 12SQ080 12SQ100
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
21
30
35
24.5
35
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
100
70
V
Maximum DC Blocking Voltage
Maximum Average Forward
100
V
12
I(AV)
IFSM
A
A
Rectified Current
@Tc=95 ℃
Peak Forward Surge Current 8.3ms single half sine-
wave super imposed on rated load(JEDEC Method)
275
0.55
0.7
0.8
Peak Forward Voltage at 12A DC(Note1)
Maximum DC Reverse Current @Tj=25℃
at Rated DC Bolcking Voltage @Tj=100℃
Tyical Junction Capacitance (Note2)
Tyical Thermal Resistance (Note3)
Operating Temperature Range
VF
IR
V
0.5
50
mA
450
3.0
CJ
R JC
TJ
pF
℃/w
℃
-55 to+200
-55 to+200
Storage Temperature Range
TSTG
℃
NOTES:1.300us Pulse Width, 2%Duty Cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal Resistance Junction to case.
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