Datasheet > 12SQ080

12SQ080

更新时间： 2024-02-05 19:35:04

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	745K
描述
12.0A Plug-in Schottky diode 80V DO-201 series

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中文翻译

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数据手册

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12SQ080 数据手册

12SQ030 - 12SQ100

SCHOTTKY BARRIER RECTIFIER DIODE

VOLTAGE RANGE: 30- 100V

CURRENT: 12 A

Features

Metal of silicon rectifier , majority carrier conduction

Guard ring for transient protection

Low power loss,high efficiency

High current capability,low VF

High surge capacity

Mechanical Data

Case: DO-201AD, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 1.2 grams (approx.)

Mounting Position: Any

DO-201AD

Min

Dim

Max

25.40

7.20

9.50

1.30

5.30

1.20

4.80

Marking: Type Number

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

Unit

12SQ030 12SQ035 12SQ040 12SQ045 12SQ050 12SQ060 12SQ080 12SQ100

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

24.5

31.5

100

Maximum DC Blocking Voltage

Maximum Average Forward

100

I(AV)

IFSM

Rectified Current

@Tc=95 ℃

Peak Forward Surge Current 8.3ms single half sine-

wave super imposed on rated load(JEDEC Method)

275

0.55

0.7

0.8

Peak Forward Voltage at 12A DC(Note1)

Maximum DC Reverse Current @Tj=25℃

at Rated DC Bolcking Voltage @Tj=100℃

Tyical Junction Capacitance (Note2)

Tyical Thermal Resistance (Note3)

Operating Temperature Range

0.5

450

3.0

R JC

℃/w

℃

-55 to+200

Storage Temperature Range

TSTG

℃

NOTES:1.300us Pulse Width, 2%Duty Cycle.

2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.

3.Thermal Resistance Junction to case.

1 of 2

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