Datasheet > 12N06L-TN3-R

12N06L-TN3-R

更新时间： 2022-09-11 01:26:18

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
5页	190K
描述
12 Amps, 60 Volts N-CHANNEL POWER MOSFET

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12N06L-TN3-R 数据手册

12N06

Preliminary

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_CASE=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=25mA, V_GS=0V

V_DS=Max rating, V_GS=0V

V_GS=+20V, V_DS=0V

µA

Forward

Reverse

+100 nA

-100 nA

Gate- Source Leakage Current

I_GSS

V_GS=-20V, V_DS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=6A

Ω

0.08 0.10

0.10 0.12

Static Drain-Source On-State Resistance

V_GS=5V, I_D=6A

DYNAMIC PARAMETERS

Input Capacitance

C_ISS

C_OSS

C_RSS

350

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS (Note 1,2)

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

7.5 10

2.5

V_GS=5V, V_DD=48V, I_D=12A

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

3.0

V_DD=30V, I_D=6A, R_G=4.7Ω,

V_GS=4.5V (Figure 1.)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

(Note 1)

I_S

I_SM

V_SD

I_S=12A, V_GS=0V

1.5

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Body Diode Reverse Recovery Current

t_RR

µC

I_S=12A, V_DD=16V, di/dt=100A/µs

T_J=150°C (Figure 3.)

Q_RR

I_RRM

2.5

Notes: 1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

3 of 5

QW-R502-561.a

www.unisonic.com.tw

1 234 5

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