5秒后页面跳转
12F10MPBF PDF预览

12F10MPBF

更新时间: 2024-02-11 19:50:14
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 143K
描述
Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

12F10MPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-4
包装说明:DO-4, 1 PIN针数:1
Reach Compliance Code:compliantHTS代码:8541.10.00.80
风险等级:5.48应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-203AAJESD-30 代码:O-MUPM-D1
JESD-609代码:e2最大非重复峰值正向电流:280 A
元件数量:1相数:1
端子数量:1最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:12 A
封装主体材料:METAL封装形状:ROUND
封装形式:POST/STUD MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified参考标准:CECC50009-037
最大重复峰值反向电压:100 V表面贴装:NO
端子面层:TIN COPPER端子形式:SOLDER LUG
端子位置:UPPER处于峰值回流温度下的最长时间:40
Base Number Matches:1

12F10MPBF 数据手册

 浏览型号12F10MPBF的Datasheet PDF文件第1页浏览型号12F10MPBF的Datasheet PDF文件第2页浏览型号12F10MPBF的Datasheet PDF文件第3页浏览型号12F10MPBF的Datasheet PDF文件第5页浏览型号12F10MPBF的Datasheet PDF文件第6页 
12F(R) Series  
Standard Recovery Diodes  
(Stud Version), 12 A  
Vishay High Power Products  
20  
DC  
180°  
120°  
16  
90°  
60°  
30°  
12  
2
0
RMS Limit  
8
K
/
W
Conduction Period  
12F(R) Series  
4
0
T = 175°C  
J
0
4
8
12  
16  
200  
Maximum Allowable Ambient Temperature (°C)  
Fig. 4 - Forward Power Loss Characteristics  
25  
50  
75  
100  
Average Forward Current (A)  
1000  
100  
10  
250  
225  
200  
175  
150  
125  
100  
At Any Rated Load Condition And With  
Rated V  
Applied Following Surge.  
T = 25°C  
J
RRM  
Initial T = 175°C  
@60 Hz 0.0083 s  
@50 Hz 0.0100 s  
J
T = 175°C  
J
12F(R) Series  
12F(R) Series  
1
0
1
2
3
4
5
6
1
10  
100  
Number Of Equal Amplitude Half Cycle Current Pulses (N)  
Instantaneous Forward Voltage (V)  
Fig. 7 - Forward Voltage Drop Characteristics  
Fig. 5 - Maximum Non-Repetitive Surge Current  
275  
10  
Maximum Non Repetitive Surge Current  
Steady State Value  
= 2.0 K/W  
Versus Pulse Train Duration.  
R
250  
Initial T = 175°C  
J
thJC  
(DC Operation)  
No Voltage Reapplied  
Rated V  
Reapplied  
225  
200  
175  
150  
125  
100  
RRM  
1
12F(R) Series  
1
12F(R) Series  
0.1  
0.001  
0.01  
0.1  
Pulse Train Duration (s)  
1
0.01  
0.1  
10  
Square Wave Pulse Duration (s)  
Fig. 8 - Thermal Impedance ZthJC Characteristics  
Fig. 6 - Maximum Non-Repetitive Surge Current  
www.vishay.com  
4
For technical questions, contact: ind-modules@vishay.com  
Document Number: 93487  
Revision: 29-Sep-08  

与12F10MPBF相关器件

型号 品牌 描述 获取价格 数据表
12F10MS02 INFINEON Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

12F10MS05 VISHAY Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

12F10MS05PBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

12F10PBF VISHAY Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

12F10S02 VISHAY Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格

12F10S02PBF INFINEON Rectifier Diode, 1 Phase, 1 Element, 12A, 100V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

获取价格