Datasheet > 12EWH06FNTRR-M3

12EWH06FNTRR-M3

更新时间： 2022-09-11 01:24:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	155K
描述
Hyperfast Rectifier, 12 A FRED Pt?

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12EWH06FNTRR-M3 数据手册

New Product

VS-12EWH06FN-M3

Vishay Semiconductors

Hyperfast Rectifier, 12 A FRED Pt^®

DYNAMIC RECOVERY CHARACTERISTICS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

I_F= 1 A, dI_F/dt = 100 A/μs, V_R= 30 V

I_F= 1 A, dI_F/dt = 50 A/μs, V_R= 30 V

T_J= 25 °C

MIN.

TYP.

MAX.

UNITS

Reverse recovery time

t_rr

T_J= 125 °C

I_F= 12 A

dI_F/dt = 200 A/μs

V_R= 390 V

T_J= 25 °C

3.5

5.4

Peak recovery current

I_RRM

T_J= 125 °C

T_J= 25 °C

Reverse recovery charge

Q_rr

T_J= 125 °C

137

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Maximum junction and storage

temperature range

T_J, T_Stg

- 65

175

°C

Thermal resistance,

junction to case per leg

R_thJC

1.3

1.7

°C/W

0.3

Approximate weight

Marking device

0.01

oz.

Case style D-PAK (TO-252AA)

12EWH06FN

www.vishay.com

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Document Number: 93254

Revision: 06-Apr-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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