生命周期: | Active | 零件包装代码: | TO-94 |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.30.00.80 |
风险等级: | 5.68 | Is Samacsys: | N |
配置: | SINGLE | 最大直流栅极触发电流: | 120 mA |
JEDEC-95代码: | TO-209AC | JESD-30 代码: | O-MUPM-H3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 140 °C | 最低工作温度: | -40 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 认证状态: | Not Qualified |
最大均方根通态电流: | 172 A | 断态重复峰值电压: | 1200 V |
重复峰值反向电压: | 1200 V | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
111RIA120M | INFINEON | 暂无描述 |
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111RIA120S90 | INFINEON | Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A |
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111RIA120S90PBF | VISHAY | Silicon Controlled Rectifier, 172A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209A |
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111RIA20 | INFINEON | Silicon Controlled Rectifier, 110000mA I(T), 200V V(DRM) |
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111RIA20M | INFINEON | Silicon Controlled Rectifier, 110000mA I(T), 200V V(DRM) |
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111RIA40 | INFINEON | Silicon Controlled Rectifier, 172A I(T)RMS, 110000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
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