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1110R40M00000AX PDF预览

1110R40M00000AX

更新时间: 2024-01-29 06:45:38
品牌 Logo 应用领域
美高森美 - MICROSEMI 机械振荡器
页数 文件大小 规格书
22页 453K
描述
TTL Output Clock Oscillator, 40MHz Nom, PLASTIC, FLAT PACKAGE-20

1110R40M00000AX 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.7最长下降时间:5 ns
频率调整-机械:NO频率稳定性:50%
JESD-609代码:e4安装特点:THROUGH HOLE MOUNT
标称工作频率:40 MHz最高工作温度:125 °C
最低工作温度:-55 °C振荡器类型:TTL
输出负载:10 TTL物理尺寸:16.51mm x 16.51mm x 3.81mm
最长上升时间:5 ns标称供电电压:5 V
表面贴装:NO最大对称度:60/40 %
端子面层:GOLDBase Number Matches:1

1110R40M00000AX 数据手册

 浏览型号1110R40M00000AX的Datasheet PDF文件第1页浏览型号1110R40M00000AX的Datasheet PDF文件第2页浏览型号1110R40M00000AX的Datasheet PDF文件第4页浏览型号1110R40M00000AX的Datasheet PDF文件第5页浏览型号1110R40M00000AX的Datasheet PDF文件第6页浏览型号1110R40M00000AX的Datasheet PDF文件第7页 
3.2  
3.3  
Item Identification. External packaging choices are of metal flatpacks, DIP’s and ceramic J-  
lead 9x14mm and LCC’s with either TTL or ACMOS logic output. Unique Model Number  
Series’ are utilized to identify device package configurations and output logic as listed in Table  
1.  
Absolute Maximum Ratings.  
a. Supply Voltage Range (VCC):  
b. Storage Temperature Range (TSTG):  
c. Junction Temperature (TJ):  
-0.5Vdc to +7.0Vdc  
-65°C to +125°C  
+175°C  
d. Lead Temperature (soldering, 10 seconds):  
e. Output Source/Sink Current  
+300°C  
70 mA  
3.4  
Design, Parts, Materials and Processes, Assembly, Inspection and Test.  
3.4.1 Design. The ruggedized designs implemented for these devices are proven in military and  
space applications under extreme environments. Designs utilize 4-point crystal mounting in  
compliment with Established Reliability (MIL-ER) componentry. When specified, radiation  
hardening up to 100krad(Si) (RHA level R) can be included without altering the device’s  
internal topography.  
3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting  
passive chip component values to offset component tolerances, there will not be fundamental  
changes to the design or assembly or parts, materials and processes after first product delivery  
of that item without written approval from the procuring activity.  
3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-  
PRF-55310. These designs have also passed extended dynamic levels of at least:  
Sine Vibration: MIL-STD-202, Method 204, Condition G (30g pk.)  
Random Vibration: MIL-STD-202, Method 214, Condition II-J (43.92g rms)  
Mechanical Shock: MIL-STD-202, Method 213, Condition F (1500g, 0.5ms)  
3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high  
reliability devices produced to this specification.  
a. Gold metallization of package elements without a barrier metal.  
b. Zinc chromate as a finish.  
c. Cadmium, zinc, or pure tin external or internal to the device.  
d. Plastic encapsulated semiconductor devices.  
e. Ultrasonically cleaned electronic parts.  
f. Heterojunction Bipolar Transistor (HBT) technology.  
g. ‘getter’ materials  
3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes and verification  
methods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.  
MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened part  
numbers to further verify lot pedigree. Traceability of all components and production lots are  
CODE IDENT NO.  
UNSPECIFIED TOLERANCES  
SIZE  
DWG NO.  
REV.  
SHEET  
A
00136  
N/A  
OS-68338  
K
3

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