Specifications ispLSI 1024/883
Switching Test Conditions
Figure 2. Test Load
Input Pulse Levels
GND to 3.0V
≤ 3ns 10% to 90%
1.5V
Input Rise and Fall Time
Input Timing Reference Levels
Output Timing Reference Levels
Output Load
+ 5V
1.5V
R
1
2
See figure 2
Device
Output
Test
Point
3-state levels are measured 0.5V from steady-state
active level.
Table 2- 0003
R
C *
L
Output Load Conditions (see figure 2)
*
C includes Test Fixture and Probe Capacitance.
L
Test Condition
R1
R2
CL
A
470Ω
390Ω
390Ω
390Ω
390Ω
35pF
35pF
35pF
5pF
B
Active High
Active Low
∞
470Ω
Active High to Z
at VOH - 0.5V
∞
C
Active Low to Z
470Ω
390Ω
5pF
at VOL + 0.5V
Table 2- 0004A
DC Electrical Characteristics
Over Recommended Operating Conditions
3
CONDITION
IOL =8 mA
PARAMETER
Output Low Voltage
MIN. TYP.
MAX.
0.4
UNITS
SYMBOL
–
2.4
–
–
–
V
V
V
V
OL
IOH =-4 mA
Output High Voltage
–
OH
0V ≤ VIN ≤ VIL (MAX.)
3.5V ≤ VIN ≤ VCC
Input or I/O Low Leakage Current
Input or I/O High Leakage Current
isp Input Low Leakage Current
I/O Active Pull-Up Current
-10
10
µA
–
I
I
I
I
I
IL
IH
–
–
µA
µA
µA
mA
mA
0V ≤ VIN ≤ VIL (MAX.)
0V ≤ VIN ≤ VIL
–
–
-150
-150
IL-isp
IL-PU
–
–
1
VCC = 5V, VOUT = 0.5V
VIL = 0.5V, VIH = 3.0V
fTOGGLE = 1 MHz
Output Short Circuit Current
Operating Power Supply Current
–
–
OS
-200
215
2,4
–
135
I
CC
1. One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems by tester ground
degradation. Characterized but not 100% tested.
2. Measured using six 16-bit counters.
3. Typical values are at VCC = 5V and TA = 25oC.
4. Maximum ICC varies widely with specific device configuration and operating frequency. Refer to the Power Consumption sec-
tion of this datasheet and Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM to estimate maximum
ICC.
0007A-24 mil
4