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100323D PDF预览

100323D

更新时间: 2024-02-25 02:40:06
品牌 Logo 应用领域
美国国家半导体 - NSC 驱动
页数 文件大小 规格书
8页 114K
描述
Low Power Hex Bus Driver

100323D 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.92
Is Samacsys:N控制类型:ENABLE HIGH
JESD-30 代码:S-PQCC-J28JESD-609代码:e0
逻辑集成电路类型:BUS DRIVER位数:6
功能数量:1端子数量:28
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC28,.5SQ
封装形状:SQUARE封装形式:CHIP CARRIER
电源:-4.5 V认证状态:Not Qualified
子类别:Bus Driver/Transceivers表面贴装:YES
技术:ECL100K端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子节距:1.27 mm
端子位置:QUADBase Number Matches:1

100323D 数据手册

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Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Recommended Operating  
Conditions  
Case Temperature  
Military  
−55˚C to +125˚C  
−5.7V to −4.2V  
Storage Temperature  
Maximum Junction Temperature  
Ceramic  
−65˚C to +150˚C  
Supply Voltage (VEE  
)
Note 1: Absolute maximum ratings are values beyond which the device may  
be damaged or have its useful life impaired. Functional operation under these  
conditions is not implied.  
+175˚C  
−7.0V to +0.5V  
VEE to +0.5V  
−50 mA  
VEE Pin Potential to Ground Pin  
Input Voltage (DC)  
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.  
Output Current (DC Output High)  
ESD  
2000V  
Military Version  
DC Electrical Characteristics  
=
=
=
=
VEE −4.2V to −5.7V, VCC VCCA GND, TC −55˚C to +125˚C  
Symbol  
Parameter  
Output HIGH  
Voltage  
Min  
Max  
Units  
mV  
mV  
mV  
mV  
mV  
MV  
mV  
TC  
Conditions  
Notes  
=
VOH  
−1025 −870  
−1085 −870  
−1035  
0˚C to +125˚C  
−55˚C  
VIN VIH (max)  
Loading with  
(Notes 3, 4, 5)  
or VIL (min)  
25to −2.0V  
=
VOHC  
VOLC  
VOLZ  
VIH  
Output HIGH  
Voltage  
0˚C to +125˚C  
−55˚C  
VIN VIH (min)  
Loading with  
(Notes 3, 4, 5)  
or VIL (max)  
25to −2.0V  
−1085  
Output LOW  
Voltage  
−1610  
0˚C to +125˚C  
−55˚C  
−1555  
=
Cut-Off LOW  
Voltage  
−1950  
0˚C to +125˚C  
−55˚C  
VIN VIH (min)  
Loading with  
(Notes 3, 4, 5)  
(Notes 3, 4, 5, 6)  
(Notes 3, 4, 5, 6)  
−1850  
or VIL (max)  
25to −2.0V  
Input HIGH  
Voltage  
−1165 −870  
mV  
mV  
µA  
−55˚C to +125˚C Guaranteed HIGH Signal  
for All Inputs  
VIL  
Input LOW  
Voltage  
−1830 −1475  
0.50  
−55˚C to +125˚C Guaranteed LOW Signal  
for All Inputs  
=
=
IIL  
Input LOW  
Current  
−55˚C to +125˚C VEE 4.2V, VIN VIL (min)  
(Notes 3, 4, 5)  
(Notes 3, 4, 5)  
=
=
IIH  
Input HIGH  
Current  
240  
340  
µA  
µA  
0˚C to +125˚C  
−55˚C  
VEE −5.7V, VIN VIH (max)  
IEE  
Power Supply  
Current  
Inputs Open  
=
−155  
−53  
mA  
−55˚C to +125˚C VEE −4.2V to −5.7V  
(Notes 3, 4, 5)  
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately  
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case  
condition at cold temperatures.  
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.  
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.  
Note 6: Guaranteed by applying specified input condition and testing V /V  
.
OH OL  
3
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