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10-FZ12PMA010M7-P849A28 PDF预览

10-FZ12PMA010M7-P849A28

更新时间: 2023-09-03 20:33:11
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
29页 8793K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

10-FZ12PMA010M7-P849A28 数据手册

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10-FZ12PMA010M7-P849A28  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
10  
0,001  
10  
25  
5,4  
6
6,6  
V
V
25  
1,66  
1,9  
2,15(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
1,96  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
0
1200  
0
25  
25  
35  
µA  
nA  
Ω
500  
None  
2000  
86  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
0
10  
25  
25  
Reverse transfer capacitance  
Gate charge  
23  
VCC = 600 V  
15  
10  
80  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,72  
K/W  
25  
127,8  
125,6  
123,4  
29  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
tr  
125  
150  
25  
32,2  
33,8  
Rgon = 32 Ω  
Rgoff = 32 Ω  
145,2  
179,2  
182  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
±15  
600  
10  
98,1  
tf  
125  
150  
25  
107,57  
116,71  
0,883  
1,12  
ns  
QrFWD=1,09 µC  
QrFWD=1,66 µC  
QrFWD=1,81 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
1,19  
0,656  
0,86  
Eoff  
125  
150  
0,908  
Copyright Vincotech  
4
25 Sep. 2021 / Revision 5  

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