Datasheet > 10-FY07BIA050SM-M523E38-3

10-FY07BIA050SM-M523E38-3

更新时间： 2022-02-26 13:25:36

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
9页	337K
描述
Ultra High-Speed IGBT and Diode

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10-FY07BIA050SM-M523E38

10-PY07BIA050SM-M523E38Y

target datasheet

In. Boost Inverse Diode

Symbol

Parameter

Conditions

Value

Typ

Unit

_r[V] _F[A]

_j[°C] Min

Max

Static

1,67

1,56

1,87

0,14

Forward voltage

125

150

V_F

Reverse leakage current

I _r

650

µA

150

Thermal

phaseꢀchange

material

=3,4W/mK

Thermal resistance junction to sink

2,87

K/W

R _th(j-s)

Bypass Diode

Symbol

Parameter

Conditions

Value

Typ

Unit

_r[V] I_F[A] _j[°C] Min

Max

Static

1,17

1,1

1,21

Forward voltage

Reverse leakage current

125

150

V_F

1600

µA

I_r

150

1100

Thermal

phaseꢀchange

material

Thermal resistance junction to sink

1,16

K/W

R _th(j-s)

=3,4W/mK

H-Bridge Diode

Symbol

Parameter

Conditions

Value

Typ

Unit

_r[V] _F[A]

_j[°C] Min

Max

Static

1,35

1,7

1,6

Forward voltage

125

150

V_F

Reverse leakage current

I _r

650

µA

150

Thermal

phaseꢀchange

Thermal resistance junction to sink

R _th(j-s)material

1,82

K/W

=3,4W/mK

19 Okt. 2015 / Revision 1

1 2 3 456 7 8 9

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