Datasheet > 10-FY07BIA050SM-M523E38-3

10-FY07BIA050SM-M523E38-3

更新时间： 2022-02-26 13:25:36

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
9页	337K
描述
Ultra High-Speed IGBT and Diode

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10-FY07BIA050SM-M523E38

10-PY07BIA050SM-M523E38Y

target datasheet

Conditions

Parameter

Symbol

Value

Unit

In. Boost Diode

Peak Repetitive Reverse Voltage

650

V_RRM

I _F

Continuous (direct) forward current

Repetitive peak forward current

Power dissipation

T_j=T_jmax

T_S=80°C

I_FRM

P_tot

T_jmax

=80°C

T_S

°C

T_jT_jmax

Maximum Junction Temperature

175

Conditions

Parameter

Symbol

Value

Unit

In. Boost Inverse Diode

Peak Repetitive Reverse Voltage

650

V_RRM

I _F

I _FRM

P_tot

Continuous (direct) forward current

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80°C

= 80°C

T_s

°C

T_jT_jmax

Maximum Junction Temperature

T_jmax

175

Conditions

Parameter

Symbol

Value

Unit

Bypass Diode

Peak Repetitive Reverse Voltage

1600

V_RRM

I _F

Continuous (direct) forward current

Surge (nonꢀrepetitive) forward current

Surge current capability

T_j= T_jmax

_h= 80°C

I_FSM

50 Hz Single Half Sine Wave

270

370

T_j= 150°C

I²

A²s

t_p= 10 ms

Total power dissipation

= 80°C

T_h

P_tot

T_jT_jmax

Maximum Junction Temperature

T_jmax

150

°C

19 Okt. 2015 / Revision 1

123 4 5 6 7...9

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