Datasheet > 10-FE12APA015SH01-PB18E08Z

10-FE12APA015SH01-PB18E08Z

更新时间： 2023-09-03 20:25:14

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
45页	5419K
描述
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching

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10-FE12APA015SH01-PB18E08Z 数据手册

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10-FE12APA015SH01-PB18E08Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Positive Boost Diode

V_RRM

Peak repetitive reverse voltage

650

I_F

Forward current (DC current)

Repetitive peak forward current

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

I_FRM

I_FSM

I²t

t_plimited by T_jmax

162

131

Single Half Sine Wave,

t_p= 10 ms

T_j= 25 °C

T_s= 80 °C

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

175

Positive Boost Blocking Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

1600

I_F

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

200

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

Positive Boost Diode Protection Diode

V_RRM

Peak repetitive reverse voltage

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

650

I_F

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

04 Nov. 2021 / Revision 1

1 2 345 6 7...45

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