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10-F1127PA050SC-L169E09 PDF预览

10-F1127PA050SC-L169E09

更新时间: 2023-09-03 20:39:34
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
29页 9307K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

10-F1127PA050SC-L169E09 数据手册

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10-F1127PA050SC-L169E09  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,0017  
50  
25  
5,3  
5,8  
6,3  
V
V
25  
1,58  
1,87  
2,18  
2,3  
2,07(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
1
µA  
nA  
Ω
20  
120  
4
Cies  
Cres  
Qg  
2800  
100  
380  
pF  
pF  
nC  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
15  
0
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,66  
K/W  
25  
96,2  
100,8  
17,2  
td(on)  
Turn-on delay time  
Rise time  
ns  
ns  
150  
25  
tr  
150  
25  
23,6  
Rgon = 8 Ω  
Rgoff = 8 Ω  
214  
td(off)  
Turn-off delay time  
Fall time  
ns  
150  
25  
281,4  
86,48  
121,84  
2,7  
±15  
600  
50  
tf  
ns  
150  
25  
QrFWD=4,8 µC  
QrFWD=9,71 µC  
Eon  
Eoff  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
mWs  
150  
25  
4,21  
2,74  
150  
4,53  
Copyright Vincotech  
4
30 Nov. 2021 / Revision 5  

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