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10-F1126PA035M7-L827F09 PDF预览

10-F1126PA035M7-L827F09

更新时间: 2023-09-03 20:25:00
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
17页 1696K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

10-F1126PA035M7-L827F09 数据手册

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10-F1126PA035M7-L827F09  
10-P1126PA035M7-L827F09Y  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
Inverter Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VGE = VCE  
0,0035 25  
25  
5,4  
6
6,6  
V
V
1,48  
1,64  
1,68  
1,75  
VCEsat  
Collector-emitter saturation voltage  
15  
35  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
1200  
0
25  
25  
0,08  
0,5  
mA  
µA  
Ω
20  
none  
8000  
280  
95  
Cies  
Coes  
Cres  
Qg  
Output capacitance  
#VALUE!  
0
10  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
15  
600  
35  
300  
nC  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Rth(j-s)  
Thermal resistance junction to sink  
0,89  
K/W  
Dynamic  
25  
124  
122  
121  
14  
td(on)  
125  
150  
25  
Turn-on delay time  
tr  
Rise time  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
25  
17  
18  
Rgoff = 8 Ω  
Rgon = 8 Ω  
ns  
179  
203  
208  
95  
118  
119  
1,45  
1,92  
2,09  
2,40  
3,17  
3,42  
td(off)  
Turn-off delay time  
Fall time  
±15  
600  
35  
tf  
Qr  
FWD  
Qr  
FWD  
Qr  
FWD  
= 4,3 μC  
= 6,2 μC  
= 6,9 μC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
3
23 Nov. 2017 / Revision 1  

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