Datasheet > 10-F1126PA035M7-L827F09

10-F1126PA035M7-L827F09

更新时间： 2023-09-03 20:25:00

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
17页	1696K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F1126PA035M7-L827F09 数据手册

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10-F1126PA035M7-L827F09

10-P1126PA035M7-L827F09Y

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Inverter Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_GE= V_CE

0,0035 25

5,4

6,6

1,48

1,64

1,68

1,75

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

0,08

0,5

µA

none

8000

280

C_ies

C_oes

C_res

Q_g

Output capacitance

#VALUE!

Reverse transfer capacitance

Gate charge

600

300

Thermal

λ_paste= 3,4 W/mK

(PSX)

R_th(j-s)

Thermal resistance junction to sink

0,89

K/W

Dynamic

124

122

121

t_d(on)

125

150

Turn-on delay time

t_r

Rise time

125

150

125

150

125

150

125

150

R_goff= 8 Ω

R_gon= 8 Ω

179

203

208

118

119

1,45

1,92

2,09

2,40

3,17

3,42

t_d(off)

Turn-off delay time

Fall time

±15

600

t_f

Q_r

FWD

Q_r

FWD

Q_r

FWD

= 4,3 μC

= 6,2 μC

= 6,9 μC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

E_off

125

150

23 Nov. 2017 / Revision 1

1 234 5 6 7...17

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