Datasheet > 10-F0122PB100SC03-M819F19

10-F0122PB100SC03-M819F19

更新时间： 2023-09-03 20:32:51

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	6747K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current

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10-F0122PB100SC03-M819F19 数据手册

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10-F0122PB100SC03-M819F19

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Half-Bridge Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,0038

100

5,1

5,8

6,4

1,53

1,72

1,97

2,01

1,97⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

1200

1,3

µA

120

7,5

6300

270

C_ies

C_res

Q_g

f = 1 Mhz

Reverse transfer capacitance

Gate charge

±15

800

Thermal

λfoil=220 W/mK

(KU-ALF5)

(2)

R_th(j-s)

Thermal resistance junction to sink

0,35

K/W

Dynamic

170,6

183,8

32,8

t_d(on)

Turn-on delay time

Rise time

125

t_r

125

R_gon= 4 Ω

R_goff= 4 Ω

292,8

365

t_d(off)

Turn-off delay time

Fall time

125

±15

600

100

59,82

121,28

6,9

t_f

125

Q_rFWD=9,06 µC

Q_rFWD=16,84 µC

E_on

E_off

Turn-on energy (per pulse)

Turn-off energy (per pulse)

mWs

125

10,14

6,26

125

9,37

05 May. 2022 / Revision 2

1 234 5 6 7...18

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