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10-EY12PMA015M7-L186A78T PDF预览

10-EY12PMA015M7-L186A78T

更新时间: 2023-09-03 20:25:20
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
29页 10194K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

10-EY12PMA015M7-L186A78T 数据手册

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10-EY12PMA015M7-L186A78T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Brake Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
19  
V
A
IF  
Forward current (DC current)  
Total power dissipation  
Tj = Tjmax  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
Ptot  
43  
W
°C  
Tjmax  
Maximum junction temperature  
175  
Rectifier Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
47  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
270  
370  
61  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition**  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
8,83  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
**Tjmax >Tj> Tjop is allowed only for maximum 60 sec overload not exceeding 1/5 duty ratio of each loading cycle for selected semiconductor component  
under switching conditions.  
Copyright Vincotech  
3
15 Apr. 2021 / Revision 5  

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