Datasheet > 10-EY12NMA016ME-LS28F16T

10-EY12NMA016ME-LS28F16T

更新时间： 2023-09-03 20:25:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
23页	8340K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY12NMA016ME-LS28F16T 数据手册

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10-EY12NMA016ME-LS28F16T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Switch

Static

15,3

20,3

22,6

20⁽¹⁾

r_DS(on)

Drain-source on-state resistance

52,8

125

150

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Gate charge

V_DS= V_GS

0,01452 25

1,8

2,6

3,6

300

µA

Ω

650

400

600

Q_g

-4/15

52,8

189

4800

300

C_iss

C_oss

C_rss

V_SD

Short-circuit input capacitance

Short-circuit output capacitance

Reverse transfer capacitance

Diode forward voltage

f = 1 Mhz

26,4

4,8

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,64

K/W

R_th(j-s)

24,19

21,45

21,11

19,52

16,92

16,22

114,39

127,75

131,53

11,21

12,32

12,14

0,618

0,543

0,553

0,605

0,601

0,608

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

R_gon= 8 Ω

R_goff= 8 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

0/15

350

t_f

125

150

Q_rFWD=0,392 µC

Q_rFWD=0,584 µC

Q_rFWD=0,744 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

24 Jan. 2023 / Revision 1

1 2 345 6 7...23

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