Datasheet > 10-E112PNA015M7-L928C78Z

10-E112PNA015M7-L928C78Z

更新时间： 2023-09-03 20:38:45

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
20页	7278K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-E112PNA015M7-L928C78Z 数据手册

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10-E112PNA015M7-L928C78Z

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Inverter Switch

V_CES

Collector-emitter voltage

1200

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

±20

9,5

175

t_SC

Short circuit ratings

V_GE= 0 V, V_CC= 800 V

µs

°C

T_jmax

Maximum junction temperature

Inverter Diode

V_RRM

Peak repetitive reverse voltage

1200

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

175

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

Forward current (DC current)

Surge (non-repetitive) forward current

Surge current capability

T_j= T_jmax

T_s= 80 °C

T_j= 150 °C

T_s= 80 °C

I_FSM

I²t

270

370

Single Half Sine Wave,

t_p= 10 ms

A²s

°C

P_tot

Total power dissipation

T_j= T_jmax

T_jmax

Maximum junction temperature

150

19 Mar. 2021 / Revision 4

123 4 5 6 7...20

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