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1.5KE91C/56 PDF预览

1.5KE91C/56

更新时间: 2024-01-23 18:54:14
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 170K
描述
Trans Voltage Suppressor Diode, 1500W, 73.7V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN

1.5KE91C/56 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.01
其他特性:UL RECOGNIZED最大击穿电压:100 V
最小击穿电压:81.9 V外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
极性:BIDIRECTIONAL最大功率耗散:6.5 W
认证状态:Not Qualified最大重复峰值反向电压:73.7 V
表面贴装:NO技术:AVALANCHE
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1.5KE91C/56 数据手册

 浏览型号1.5KE91C/56的Datasheet PDF文件第1页浏览型号1.5KE91C/56的Datasheet PDF文件第2页浏览型号1.5KE91C/56的Datasheet PDF文件第3页浏览型号1.5KE91C/56的Datasheet PDF文件第5页浏览型号1.5KE91C/56的Datasheet PDF文件第6页浏览型号1.5KE91C/56的Datasheet PDF文件第7页 
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303  
Vishay Semiconductors  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
RθJL  
Limit  
20  
Unit  
Typical thermal resistance junction-to-lead  
°C/W  
Typical thermal resistance junction-to-ambient  
RθJA  
75  
°C/W  
Application  
• This series of Silicon Transient Suppressors is  
used in applications where large voltage tran-  
sients can permanently damage voltage-sensitive  
components.  
• This Transient Voltage Suppressor diode has a  
pulse power rating of 1500 watts for one millisec-  
ond. The response time of TVS diode clamping  
-9  
action is effectively instantaneous (1 x 10 sec-  
onds bidirectional); therefore, they can protect  
integrated circuits, MOS devices, hybrids, and  
other voltage sensitive semiconductors and com-  
ponents. TVS diodes can also be used in series or  
parallel to increase the peak power ratings.  
• The TVS diode can be used in applications where  
induced lightning on rural or remote transmission  
lines presents a hazard to electronic circuitry (ref:  
R.E.A. specification P.E. 60).  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise specified)  
100  
10  
1
150  
TJ = 25 °C  
tr = 10 µsec.  
Pulse Width (td)  
is defined as the point  
where the peak current  
decays to 50 % of IPPM  
Peak Value  
IPPM  
100  
50  
0
Half Value — IPP  
IPPM  
2
10/1000 µsec. Waveform  
as defined by R.E.A.  
td  
0.1  
0.1µs  
1.0µs  
10µs  
100µs  
1.0ms  
10ms  
1.0  
3.0  
4.0  
0
2.0  
t — Time (ms)  
td — Pulse Width (sec.)  
Figure 1. Peak Pulse Power Rating Curve  
Figure 3. Pulse Waveform  
10000  
100  
Unidirectional  
Bidirectional  
V
R
= 0  
75  
50  
1000  
V
= Rated  
R
100  
10  
Stand-off Voltage  
25  
0
f = 1 MHz  
Vsig = 50 m Vp-p  
= 25°C  
T
J
5
10  
100  
V(BR), Breakdown Voltage (V)  
500  
0
25  
50  
75  
100  
125  
150  
175 200  
TA — Ambient Temperature (°C)  
Figure 2. Pulse Derating Curve  
Figure 4. Typical Junction Capacitance  
www.vishay.com  
4
Document Number 88301  
03-Mar-05  

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