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1.4KESD40ATR PDF预览

1.4KESD40ATR

更新时间： 2024-11-19 13:00:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 电视
页数 文件大小 规格书
4页 154K
描述
Trans Voltage Suppressor Diode, 1400W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AH, HERMETIC SELAD, GLASS, DO-35, 2 PIN

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1.4KESD40ATR 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DO-35包装说明：HERMETIC SELAD, GLASS, DO-35, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.92最小击穿电压：44.4 V
外壳连接：ISOLATED最大钳位电压：84.2 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-204AH
JESD-30 代码：O-LALF-W2JESD-609代码：e0
最大非重复峰值反向功率耗散：1400 W元件数量：1
端子数量：2封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：0.5 W认证状态：Not Qualified
最大重复峰值反向电压：40 V子类别：Transient Suppressors
表面贴装：NO技术：AVALANCHE
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1.4KESD40ATR 数据手册

 浏览型号1.4KESD40ATR的Datasheet PDF文件第2页浏览型号1.4KESD40ATR的Datasheet PDF文件第3页浏览型号1.4KESD40ATR的Datasheet PDF文件第4页 
1.4KESD5.0 thru 1.4KESD170CA, e3  
AXIAL-LEAD TVS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These small axial-leaded TVS devices feature the ability to clamp  
dangerous high voltage short-term transients such as produced by directed  
or radiated electrostatic discharge phenomena before entering sensitive  
component regions of a circuit design. They are small economical transient  
voltage suppressors targeted primarily for short-term transients below a few  
microseconds while still achieving significant peak-pulse-power capability  
as illustrated in Figure #1.  
DO-35  
(DO-204AH)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Excellent protection in clamping direct ESD level  
transients in excess of 15,000 V per MIL-STD-750,  
Method 1020 (approx. 150 ns exponential wave)  
•
•
Protects Sensitive circuits from short duration fast  
rise time transients such as Electrostatic Discharge  
(ESD) or Electrical Fast Transients (EFT)  
Absorbs ESD level transients* of 1400 Watts per MIL-  
STD-750, Method 1020 (approx. 150 ns exponential  
wave, or one microsecond transients up to 400 watts.  
See Figure #1 and #2 for overall transient Peak Pulse  
Power.  
Low inherent capacitance for high-frequency  
applications (See Figure #4)  
•
•
Flexible axial-lead mounting terminals  
Bidirectional features available by adding a “C” or  
“CA” suffix  
•
•
•
Clamps Transients in less than 100 picoseconds  
Working Stand-off Voltage range of 5 V to 170 V  
Hermetic DO-35 Package. Also available in surface  
mount DO-213AA MELF package (see separate data  
sheet)  
•
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
400 Watts for One Microsecond Square Wave or  
1400 watts per ESD Wave form of MIL-STD-750,  
method 1020.  
•
CASE: Hermetically sealed axial-lead glass DO-35  
(DO-204AH) package  
•
FINISH: Tin-lead or RoHS Compliant matte-Tin  
plating solderable per MIL-STD-750, method 2026  
•
•
•
See Surge Rating curve in Figures #1 and 2.  
Operating and storage temperature –65oC to 175oC  
•
•
•
•
POLARITY: Banded end is cathode  
WEIGHT: 0.2 grams (typical)  
MARKING: Part number  
THERMAL RESISTANCE: Less than 250oC/W  
junction to lead at 0.375 inches from body.  
•
•
•
DC power dissipation 500 mW at TL = 75oC at 3/8  
inch (10 mm) lead length from body.  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
Derate at 2.3 W/oC above 25oC for PPP (1μs) and at  
•
See package dimension on last page  
5 mW/oC above 100oC for dc power.  
Forward Surge Current 50 amps for 1μs at TL = 25oC  
(rise time > 100 ns).  
Copyright © 2006  
3-29-2006 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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